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Growth and Characterization of GaAs Epitaxial Layers on Ge by Atmospheric Pressure MOVPE

著者名:
Tyagi,R.
Pal,R.
Singh,M.
Srinivasan,T.
Agarwal,S.K.
Pal,D.
Bose,D.N.
Maithani,M.
Hussain,M.
さらに 4 件
掲載資料名:
Physics of - Semiconductor Devices -
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3316
発行年:
1998
巻:
Part 1
開始ページ:
384
終了ページ:
387
出版情報:
New Delhi: Narosa Publishing House
ISSN:
0277786X
ISBN:
9780819427564 [081942756X]
言語:
英語
請求記号:
P63600/3316
資料種別:
国際会議録

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