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New Developments in III-Nitride Material and Device Applications

著者名:
Razeghi,M.
Saxler,A.
Kung,P.
Walker,D.
Zhang,X.
Kim,K.S.
Vydyanath,H.R.
Solomon,J.
Ahoujja,M.
Mitchel,W.C.
さらに 5 件
掲載資料名:
Physics of - Semiconductor Devices -
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3316
発行年:
1998
巻:
Part 1
開始ページ:
277
終了ページ:
284
出版情報:
New Delhi: Narosa Publishing House
ISSN:
0277786X
ISBN:
9780819427564 [081942756X]
言語:
英語
請求記号:
P63600/3316
資料種別:
国際会議録

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9 国際会議録 Growth of GaN Without Yellow Luminescence

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4 国際会議録 Electrical characterization of AlxGa1-xN for UV photodetector applications

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