Blank Cover Image

Pulsed laser annealing effects in high dose rate silicon implants

著者名:
Williams, J.S. ( R.M.I.T. Melbourne, 3000, Australia )
Pogany, A.P. ( R.M.I.T. Melbourne, 3000, Australia )
Beanland, D.G. ( R.M.I.T. Melbourne, 3000, Australia )
Chivers, D.J. ( Harwell Research Laboratories, Didcot, England )
Kenny, M.J. ( AAEC Research Establishment, Lucas Heights, Australia )
Rose, A. ( AAEC Research Establishment, Lucas Heights, Australia )
Scott, M.D. ( AAEC Research Establishment, Lucas Heights, Australia )
さらに 2 件
掲載資料名:
Laser and electron-beam solid interactions and materials processing : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposia proceedings
シリーズ巻号:
1
発行年:
1981
開始ページ:
169
終了ページ:
175
出版情報:
New York: North Holland
ISSN:
02729172
ISBN:
9780444005953 [0444005951]
言語:
英語
請求記号:
M23500/1
資料種別:
国際会議録

類似資料:

1 国際会議録 AMORPHOUS TO CRYSTALLINE PHASE TRANSFORMATIONS IN HIGH DOSE ION IMPLANTED SILICON

Williams, J.S., Thornton, R.P., Elliman, R.G., Li, Y.H., Pogany, A.P.

Materials Research Society
7 国際会議録 HIGH DOSE IMPLANTATION OF NICKEL INTO SILICON

Campisi, G.J., Dietrich, H.B., Delfino, M., Sadana, D.K.

Materials Research Society
2 国際会議録 THE PRODUCTION OF POROUS STRUCTURES ON Si, Ge AND GaAs BY HIGH DOSE ION IMPLANTATION

Williams, J. S., Chivers, D. J., Elliman, R. G., Johnson, S. T., Lawson, E. M., Mitchell, I. V., Orrman-Rossiter, K. G., …

North-Holland
8 国際会議録 ION-BEAM-INDUCED DAMAGING AND DYNAMIC ANNELAING PROCESSES IN SILICON

Short, K. T., Chivers, D. J., Elliman, R. G., Liu, J., Pogany, A. P., Wagenfeld, H. K., Williams, J. S.

North-Holland
3 国際会議録 METASTABLE PHASES PRODUCED IN NICKEL BY HIGH DOSE La AND O IMPLANTATION AND PULSED LASER MELT QUENCHING

Sood, D.K., Pogany, A.P., Battaglin, G., Carnera, A., Della Mea, G., Kulkarni, V.L., Mazzoldi, P., Chaumont, J.

Materials Research Society
9 国際会議録 CRYSTALLIZATION AND MELTING OF AMORPHOUS SILICON ON A MICROSECOND TIME SCALE

Olson, G.L., Roth, J.A., Nygren, E., Pogany, A.P., Williams, J.S.

Materials Research Society
4 国際会議録 LATTICE PARAMETER CHANGES IN HIGH DOSE ION-IMPLANTED, PULSED LASER ANNEALED GaAs:Si

Compaan, A., Yao, H. D., Adams, P. M., Knudsen, J. F.

Materials Research Society
10 国際会議録 FORMATION OF NIOBIUM CARBIDES IN HIGH-DOSE CARBON-ION-IMPLANTED AND ANNEALED NIOBIUM

Huang, J.S.

Materials Research Society
5 国際会議録 PROPERTIES OF HIGH DOSE LOW TEMPERATURE RAPID THERMALLY ANNEALED GALLIUM IMPLANTED SILICON

Lee, Y. H., Harrison, H. B., Pogany, A. P., Olson, G. L

Materials Research Society
11 国際会議録 COMPARISON OF PULSED LASER AND FURNACE ANNEALING OF NITROGEN IMPLANTED SILICON

Smith III, T. P., Stiles, P. J., Augustyniak, W. M., Brown, W. L., Jacobson, D. C., Kant. R. A.

North-Holland
6 国際会議録 Microstructure of Ultra-High Dose Self-Implanted Silicon

Zhu, X. F., Williams, J. S., Llewellyn, D. J., McCallum, J. C.

MRS - Materials Research Society
12 国際会議録 DIFFUSION AND ACTIVATION DURING RAPID THERMAL ANNEALING OF IMPLANTED BORON IN SILICON

Cowern, N.E.B., Yallup, K.J., Godfrey, D.J., Hasko, D.G., McMahon, R.A., Ahmed, H., Stobbs, W.M., McPhail, D.S.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12