THERMAL OXIDATION: KINETICS, CHARGES, PHYSICAL MODELS, AND INTERACTION WITH OTHER PROCESSES IN VLSI DEVICES

THERMAL OXIDATION: KINETICS, CHARGES, PHYSICAL MODELS, AND INTERACTION WITH OTHER PROCESSES IN VLSI DEVICES

著者名:

掲載資料名:

Process and device simulation for MOS-VLSI circuits

シリーズ名:

NATO ASI series. Series E, Applied sciences

シリーズ巻号:

62

発行年:

1983

開始ページ:

48

終了ページ:

87

総ページ数:

40

出版情報:

Boston: Martinus Nijhoff Publishers

ISSN:

0168132X

ISBN:

9789024728244 [902472824X]

言語:

英語

請求記号:

N11482/62

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016831
シリーズID:	PA00000018
会議名:	NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits
回次:	1982
会議開催地:	Urbino, Italy
会議開催年:	1982.07.12-1982.07.23

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