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Interface Characterization of GaInAs-InP Superlattices Grown by Low Pressure Metalorganic Chemical Vapor Deposition

著者名:
掲載資料名:
Properties of impurity states in superlattice semiconductors
シリーズ名:
NATO ASI series. Series B, Physics
シリーズ巻号:
183
発行年:
1988
開始ページ:
43
終了ページ:
61
総ページ数:
19
出版情報:
New York: Plenum Press
ISBN:
9780306430091 [0306430096]
言語:
英語
請求記号:
N11479/183
資料種別:
国際会議録

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