Porous SiC substrate materials for high-quality epitaxial and bulk growth | 東京工業大学附属図書館文献データベース

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Porous SiC substrate materials for high-quality epitaxial and bulk growth

著者名:

Kryzhanovski, A.

さらに 6 件

掲載資料名:

Substrate engineering - paving the way to epitaxy : sympoisum held November 29-December 3, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

587

発行年:

2000

開始ページ:

O8.6.1

出版情報:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994959 [1558994955]

言語:

英語

請求記号:

M23500/587

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016704
シリーズID:	PA00000011
会議名:	MRS Fall Meeting
回次:	1999
会議開催地:	Boston, MA, USA
会議開催年:	1999.11.29-1999.12.03

類似資料:

1 国際会議録 Growth of SiC and GaN on Porous Buffer Layers Mynbaeva, M., Savkina, N. S., Tregubova, A. S., Scheglov, M. P., Lebedev, A. A., Zubrilov, A., Titkov, A., Kryganovski, … Trans Tech Publications	7 国際会議録 Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers Savkina, N.S., Shuman, V.B., Ratnikov, V.V., Rogachev, A.Yu., Lebedev, A.A. Trans Tech Publications
2 国際会議録 GaN and AIN layers grown by nano epitaxial lateral overgrowth technique on porous substrates Mynbaeva, M., Titkov, A., Kryzhanovski, A., Zubrilov, A., Ratnikov, V., Davydov, V., Kuznetsov, N., Mynbaev, K., … MRS-Materials Research Society	8 国際会議録 High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate Strel'chuk, A.M., Lebedev, A.A., Kuznetsov, A.N., Savkina, N.S., Soloviev, V.A. Trans Tech Publications
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