Impact of active dimension on junction leakages of a Ti-salicide process integrated with shallow-trench isolation

Impact of active dimension on junction leakages of a Ti-salicide process integrated with shallow-trench isolation

著者名:

Siah,S.-Y. ( Chartered Semiconductor Manufacturing Ltd. )
Lim,E.H.
Shiu,M.-J.
Lee,K.H.
Zheng,J.Z.

掲載資料名:

Microelectronic Device Technology III

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3881

発行年:

1999

開始ページ:

293

終了ページ:

301

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819434784 [0819434787]

言語:

英語

請求記号:

P63600/3881

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016694
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : Microelectronic Dvece Technology
回次:	1999 : 3rd
会議開催地:	Santa Clara, CA, USA
会議開催年:	1999.09.22-1999.09.23

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