Stress-induced leakage currents of CMOS ULSI devices with shallow trench isolation

Stress-induced leakage currents of CMOS ULSI devices with shallow trench isolation

著者名:

Sundaresan,R. ( Chartered Semiconductor Manufacturing,Ltd. )
Gan,C.H.
Peidous,I.V.

掲載資料名:

Microelectronic Device Technology III

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3881

発行年:

1999

開始ページ:

224

終了ページ:

233

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819434784 [0819434787]

言語:

英語

請求記号:

P63600/3881

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016694
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : Microelectronic Dvece Technology
回次:	1999 : 3rd
会議開催地:	Santa Clara, CA, USA
会議開催年:	1999.09.22-1999.09.23

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2 国際会議録 Gate Oxide Thinning in MOS Structures with Shallow Trench Isolation Balasubramanian, N., Johnson, E., Perera, C., Mian, C.-S., Sheng, T.-T., Peidous, I.V., Ping, C., Cuthbertson, A., … Electrochemical Society	8 国際会議録 Experimental Study and Simulation of Stress-Induced Cavities in Silicon Loiko, K.V., Peidous, I.V., Frensley, W.R. Electrochemical Society
3 国際会議録 Reduction of Substrate Leakage Current by Minimizing Trench-isolation- Induced Stress Miura, H., Ishitsuka, N., Suzuki, N., Ohyu, K., Ikeda, S. Electrochemical Society	9 国際会議録 Narrow-channel transistor threshold self-adjustment technique for ULSI with LOCOS isolation Loiko,K.V., Peidous,I.V., Ho,H.-M., Bromley-Barratt,J.F., Quek,E.K.B., Lim,D.H.Y. SPIE-The International Society for Optical Engineering
4 国際会議録 Derivation of Defect Formation History from Dislocation Distribution in Locally Oxidized Silicon Structures Peidous, I.V., Gan, C.H., Sundaresan, R., Lahiri, S.K. Electrochemical Society	10 国際会議録 Improved Shallow Trench Isolation Process for Sub-Quarter-Micron CMOS Technologies Sallagoity, P., Gaillard, F., Rivoire, M., Paoli, M., Brouquet, P., Haond, M., McClathie, S., Beekmann, K., Kiermasz, … Electrochemical Society
5 国際会議録 Investigating the Role of Stress in SOG-filled Shallow-Trench-Isolation Structures of sub-70nm Device A. Das, A. Klipp, H. Sperlich, R. Nitsche Electrochemical Society	11 国際会議録 Scatterometry for shallow trench isolation (STI) process metrology Raymond,C.J., Littau,M.E., Markle,R.J., Purdy,M.A. SPIE-The International Society for Optical Engineering
6 国際会議録 Analysis of Process-Induced Stresses in Lateral Trench Isolation Structures for High Voltage Devices in Bonded SOI Wafers Baumgart, H., Letavic, T.J., Wolf, I.De., Tsou, L., Maes, H.E., Egloff, R. Electrochemical Society	12 国際会議録 Mechanical Stress Characterization of Shallow Trench Isolation by Kelvin Probe Force Microscopy Rueda, H., Slinkman, J., Chidambarrao, D., Moszkowicz, L., Kaszuba, P., Law, M. MRS - Materials Research Society

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