Effects of indium implant and post-RTA on performance and reliability of sub-100-nm retrograde channel NMOSFETs

Effects of indium implant and post-RTA on performance and reliability of sub-100-nm retrograde channel NMOSFETs

著者名:

Xiang,Q. ( Advanced Micro Devices,Inc )
Yu,B.
Yeap,G.C.-F.
Lin,M.-R.

掲載資料名:

Microelectronic Device Technology III

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3881

発行年:

1999

開始ページ:

186

終了ページ:

194

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819434784 [0819434787]

言語:

英語

請求記号:

P63600/3881

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016694
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : Microelectronic Dvece Technology
回次:	1999 : 3rd
会議開催地:	Santa Clara, CA, USA
会議開催年:	1999.09.22-1999.09.23

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