Gate-Length-and threshold-voltage-dependent nonlinearity in the hot carrier DC Lifetime extrapolation for sub-100-nm NMOS devices
- 著者名:
Chheda,S.N. ( Motorola ) Bhat,N. Tsui,P. Gonzales,S. Cave,N. Fu,C.-C. Huang,F. Nangia,A. Choi,P.S.-J. Collins,S. - 掲載資料名:
- Microelectronic Device Technology III
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3881
- 発行年:
- 1999
- 開始ページ:
- 175
- 終了ページ:
- 185
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819434784 [0819434787]
- 言語:
- 英語
- 請求記号:
- P63600/3881
- 資料種別:
- 国際会議録
類似資料:
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
SPIE - The International Society for Optical Engineering | |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
4
国際会議録
An Analytical Temperature Dependent Threshold Voltage Model for Thin Film Surrounded Gate SOI MOSFET
SPIE - The International Society for Optical Engineering |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
12
国際会議録
Threshold Voltage Optimization with Ion Shower Implantation for Polysilicon Thin-Film Transistors
Materials Research Society |