CVD Si1-xGex epitaxial growth and its applications to MOS devices
- 著者名:
- Murota,J. ( Tohoku Univ. )
- Sakuraba,M.
- Matsuura,T.
- 掲載資料名:
- Microelectronic Device Technology III
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3881
- 発行年:
- 1999
- 開始ページ:
- 33
- 終了ページ:
- 45
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819434784 [0819434787]
- 言語:
- 英語
- 請求記号:
- P63600/3881
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
Electrochemical Society |
2
国際会議録
Low-Temperature Epitaxial Growth of In Situ Heavily B-Doped Si1-xGex Films Using Ultraclean LPCVD
MRS - Materials Research Society |
MRS - Materials Research Society |
Electrochemical Society | |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |