Blank Cover Image

SIGNIFICANCE OF A NUCLEATION LAYER IN INHIBITING INTERFACIAL PITTING IN InAs FILMS GROWN BY TWO-STEP MOCVD ON (100) InP SUBSTRATES

著者名:
掲載資料名:
Common themes and mechanisms of epitaxial growth : symposium held April 13-15, 1993, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
312
発行年:
1993
開始ページ:
173
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992085 [1558992081]
言語:
英語
請求記号:
M23500/312
資料種別:
国際会議録

類似資料:

1 国際会議録 DEFECT CHARACTERIZATION OF InAs FILMS GROWN BY TWO-STEP MOCVD ON (100) InP SUBSTRATES

Ballal, A.K., Salamanca-Riba, L., Partin, D.L.

Materials Research Society
7 国際会議録 ORDERING IN Zn0.5Fe0.5Se EPILAYERS GROWN ON InP SUBSTRATES BY MOLECULARR BEAM EPITAXY

Salamanca-Riba, L., Park, K., Jonker, B. T.

Materials Research Society
2 国際会議録 NUCLEATION AND HETEROINTERFACE STRUCTURE OF InAs EPILAYERS GROWN ON InP SUBSTRATES

Chandra Sekhar, K.S., Ballal, A.K., Salamanca-Riba, L., Partin, D.L.

Materials Research Society
8 国際会議録 Growth Mechanism and Structure of AIN Films Grown on Sapphire by MOCVD

Li, Yun-Xin, Salamanca-Riba, L., Wongchotigul, K., Zhou, P., Spencer, M. G., Jones, V. K.

MRS - Materials Research Society
3 国際会議録 DEFECT STRUCTURES IN EPITAXIALLY GROWN InAs FILMS ON InP SUBSTRATES

Ballal, A. K., Salamanca, Riba, L., Partin, D. L., Heremans, J., Green, L., Fuller, B. K.

Materials Research Society
9 国際会議録 The Effect of Ge on the Structure & Morphology of SiC Films Grown on (111)Si Substrates

Sarney, W. L., Salamanca-Riba, L., Zhou, P., Taylor, C., Spencer, M. G., Vispute, R. D., Jones, K. A.

Trans Tech Publications
4 国際会議録 INITIAL STAGES OF GROWTH OF EPITAXIAL InAs FILMS ON InP SUBSTRATE

Sekhar, Chandra K. S., Ballal, A. K., Salamanca-Riba, L., Partin,. D. L.

Materials Research Society
10 国際会議録 Effect of Ge on SiC film morphology in SiC/Si films grown by MOCVD

Sarney, W. L., Salamanca-Riba, L., Zhou, P., Spencer, M. G., Taylor, C., Sharma, R. P., Jones, K. A.

MRS-Materials Research Society
5 国際会議録 TEM STUDY OF MOCVD GROWN InSb/GaAs HETEROSTRUS WITH AND WITHOUT TMIn PREDEPOSITED LAYERS

Kuo, L. H., Hua, Susan Z., Salamanca-Riba, L., Partin, D. L., Green, L., Heremans, J.

MRS - Materials Research Society
11 国際会議録 Investigation of the morphology of AlN films grown on sapphire by MOCVD using transmission electron microscopy

Sarney, W. L., Salamanca-Riba, L., Zhou, P., Wilson, S., Spencer, M. G., Jones, K. A.

MRS-Materials Research Society
6 国際会議録 ORDERED STRUCTURES OF Zn1-XFexSe EPILAYERS GROWN ON InP AND GaAs SUBSTRATES

Park, K., Wei, H. -Y., Salamanca-Riba, L., Jonker, B. T.

MRS - Materials Research Society
12 国際会議録 ORDERED STRUCTURES OF Zn1-xFexSe EPILAYERS GROWN ON GaAs SUBSTRATES WITH ZnSe BUFFER LAYERS

Wei, H. -Y., Beesabathina, D. Prasad, Salamanca-Riba, L., Jonker, B. T.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12