Electrical Defects of Shallow (p+/n) Junctions Formed by Boron Implantation Into Ge-Preamorphized Si Substrates

Electrical Defects of Shallow (p+/n) Junctions Formed by Boron Implantation Into Ge-Preamorphized Si Substrates

著者名:

掲載資料名:

Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

469

発行年:

1997

開始ページ:

413

出版情報:

Pittsburg, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993730 [1558993738]

言語:

英語

請求記号:

M23500/469

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016586
シリーズID:	PA00000011
会議名:	Symposium on defects and diffusion in silicon processing
回次:	1997
会議開催地:	San Francisco, CA, USA
会議開催年:	1997.04.01-1997.04.04

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