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Effect of End-of-Range Defects, Arsenic Clustering, and Precipitation on Transient-Enhanced Diffusion in As+- Implanted Si

著者名:
掲載資料名:
Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
469
発行年:
1997
開始ページ:
401
出版情報:
Pittsburg, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993730 [1558993738]
言語:
英語
請求記号:
M23500/469
資料種別:
国際会議録

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