Diffusion of Gold Into Heavily Boron-Doped Silicon
- 著者名:
- 掲載資料名:
- Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 469
- 発行年:
- 1997
- 開始ページ:
- 25
- 出版情報:
- Pittsburg, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993730 [1558993738]
- 言語:
- 英語
- 請求記号:
- M23500/469
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Segregation of gold at dislocations confirmed by gold diffusion into highly dislocated silicon
Trans Tech Publications |
7
国際会議録
EQUILIBRIUM CONCENTRATIONS OF INTRINSIC POINT DEFECTS IN SILICON DETERMINED BY ZINC DIFFUSION
Electrochemical Society |
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
MRS - Materials Research Society |
Electrochemical Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
Electrochemical Society |