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Incorporation of Nitrogen Atoms at Si/SiO2 Interfaces of Field Effect Transistors (FETs) to Improve Device Reliability

著者名:
Lucovsky, G.
Lee, D. R.
Jing, Z.
Whitten, J. L.
Parker, C.
Hauser, J. R.
さらに 1 件
掲載資料名:
Surface/interface and stress effects in electronic material nanostructures : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
405
発行年:
1996
開始ページ:
321
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993082 [1558993088]
言語:
英語
請求記号:
M23500/405
資料種別:
国際会議録

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