Reactive Ion Etching of AlN, AlGaN, and GaN Using BCl3

Reactive Ion Etching of AlN, AlGaN, and GaN Using BCl3

著者名:

掲載資料名:

Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

395

発行年:

1996

開始ページ:

757

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992986 [1558992987]

言語:

英語

請求記号:

M23500/395

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016579
シリーズID:	PA00000011
会議名:	International symposium on gallium nitride and related materials
回次:	1st
会議開催地:	Boston, MA, USA
会議開催年:	1995.11.27-1995.12.01

類似資料:

1 国際会議録 Reactive MBE Growth of GaN and GaN:H on GaN/SiC Substrates Johnson, M. A. L., Yu, Zhonghai, Boney, C., Hughes, W. C., Cook, J. W., Jr., Schetzina, J. F., Zhao, H., Skromme, B. J., … MRS - Materials Research Society	7 国際会議録 Reactive Ion Etching of Ir Films with a TiN Mask in Ar/02/BCl3 Helicon Wave Plasma Chiang, M.C., Pan, F.M., Liu, T.P., Wei, T.C., Dai, B.T., Chien, H.C. Electrochemical Society
2 国際会議録 Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys Muth, J. F., Brown, J. D., Johnson, M. A. L., Yu, Z., Kolbas, R. M., Cook, J. W., Jr., Schetzina, J. F. MRS - Materials Research Society	8 国際会議録 Nanometre Scale Reactive Ion Etching of GaN Epilayers Coquillat,D., Murad,S.K., Ribayrol,A., Smith,C.J.M., Rue,R.M.De La, Wilkinson,C.D.W., Briot,O., Aulombard,R.L. Trans Tech Publications
3 国際会議録 MBE Growth of III-V Nitride Films and Quantum-Well Structures Using Multiple rf Plasma Sources Johnson, M. A. L., Yu, Zhonghai, Boney, C., Rowland, W. H., Jr., Hughes, W. C., Cook, J. W., Jr., Schetzina, J. F., … MRS - Materials Research Society	9 国際会議録 MBE Growth of III-V Nitride Thin Films and Quantum Well Structures Johnson,M.A.L., ,N.A.El-Masry Jr., J.W.Cook,Jr, Schetzina,J.F. Trans Tech Publications
4 国際会議録 GaN Etching in BCl3/Cl2 Plasmas Shul, R. J., Ashby, C. I. H., Willison, C. G., Zhang, L., Han, J., Bridges, M. M., Pearton, S. J., Lee, J. W., Lester, … MRS - Materials Research Society	10 国際会議録 A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications Johnson, M. A. L., Yu, Z., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., Edmond, J. A., Cook, J. W., Jr., … MRS - Materials Research Society
5 国際会議録 Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates Yu, Z., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., Jr., Schetzina, J. F., Haberern, K. … MRS - Materials Research Society	11 国際会議録 MOCVD AlGaN/GaN HFETs on Si: Challenges and Issues Rajagopal, Pradeep, Roberts, John C., Cook, J.W.Jr., Brown, J.D., Piner, Edwin L., Linthicum, Kevin J. Materials Research Society
6 国際会議録 Reactive ion etching of GaN in BCl3/N2 plasmas Fedison, J.B., Chow, T.P., Lu, H., Bhat, I.B. Electrochemical Society	12 国際会議録 REACTIVE ION ETCH OF GaAs AND AlGaAs USING BCl3, SiCl4 AND SF6 INSTEAD OF CCl2F2 Wu, J. W., Chang, C. Y., Lin, K. C., Chang, E. Y., Hwang, J. H. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12