Plasma Chemistry Dependent ECR Etching of GaN

Plasma Chemistry Dependent ECR Etching of GaN

著者名:

Shul, R. J.

掲載資料名:

Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

395

発行年:

1996

開始ページ:

751

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992986 [1558992987]

言語:

英語

請求記号:

M23500/395

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016579
シリーズID:	PA00000011
会議名:	International symposium on gallium nitride and related materials
回次:	1st
会議開催地:	Boston, MA, USA
会議開催年:	1995.11.27-1995.12.01

類似資料:

1 国際会議録 High Rate Dry Etching of GaN, AIN and InN in ECR Cl2/CH4/H2/Ar Plasmas Vartuli, C. B., Pearton, S. J., Abernathy, C. R., Shul, R. J., Kilcoyne, S. P., Crawford, M. Hagerott, Howard, A. J., … MRS - Materials Research Society	7 国際会議録 The Role of Plasma Chemistry and Ion Density in Dry Etching of Nitrides Vartuli, C.B., Pearton, S.J., Abernathy, C.R., Shul, R.J., Ren, F. Electrochemical Society
2 国際会議録 High Rate ECR Etching of III-V Nitride Materials Shul, R.J., Howard, A.J., Kilcoyne, S.P., Pearton, S.J., Abernathy, C.R., Vartuli, C.B., Barnes, P.A., Bozack, M.J. Electrochemical Society	8 国際会議録 Cl2-Based Dry Etching of the AlGalnN System in Inductively-Coupled Plasmas Cho, Hyun, Vartuli, C. B., Abernathy, C. R., Donovan, S. M., Pearton, S. J., Shul, R. J., Han, J. MRS - Materials Research Society
3 国際会議録 Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN Pearton, S. J., Vartuli, C. B., Lee, J. W., Donovan, S. M., MacKenzie, J. D., Abernathy, C. R., Shul, R. J., McLane, G. … MRS - Materials Research Society	9 国際会議録 Comparison of ICI and Ibr for Dry Etching of III-Nitrides Vartuli, C. B., Lee, J. W., MacKenzie, J. D., Pearton, S. J., Abernathy, C. R., Shul, R. J. MRS - Materials Research Society
4 国際会議録 ECR, ICP and RIE plasma etching of GaN Shul, R.J., McClellan, G.B., Rieger, D.J., Hafich, M.J., Drummond, T.J., Pearton, S.J., Abernathy, C.R., Constantine, … Electrochemical Society	10 国際会議録 Fabrication of Novel III-N and III-V Modulator Structures by ECR Plasma Etching Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Mileham, J. R., Shul, R. J., Kilcoyne, S. P., Hagerott-Crawford, M., … MRS - Materials Research Society
5 国際会議録 Chlorine-Based Plasma Etching of GaN Shul, R. J., Briggs, R. D., Pearton, S. J., Vartuli, C. B., Abernathy, C. R., Lee, J. W., Constantine, C., Barratt, C. MRS - Materials Research Society	11 国際会議録 Comparison of Novel Chlorine, Bromine, and Iodine Plasma Chemistries for Anisotropic Trench Etching in GaN, InN, and AIN Cho, Hyun, Maeda, T., MacKenzie, J. D., Donovan, S. M., Abernathy, C. R., Pearton, S. J., Shul, R. J., Han, J., Ren, F. MRS - Materials Research Society
6 国際会議録 ECR Etching of Group-III Nitride Binary and Ternary Films Shul, R.J., Howard, A.J., Pearton, S.J., Abernathy, C.R., Variuli, C.B., Barnes, P.A. Electrochemical Society	12 国際会議録 GaN Etching in BCl3/Cl2 Plasmas Shul, R. J., Ashby, C. I. H., Willison, C. G., Zhang, L., Han, J., Bridges, M. M., Pearton, S. J., Lee, J. W., Lester, … MRS - Materials Research Society

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