MEASURING VACANCY DIFFUSIVITY AND VACANCY ASSISTED CLUSTERING BY NITRIDATION ENHANCED DIFFUSION OF Sb IN Si(100) DOPING SUPERLATTICES | 東京工業大学附属図書館文献データベース

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MEASURING VACANCY DIFFUSIVITY AND VACANCY ASSISTED CLUSTERING BY NITRIDATION ENHANCED DIFFUSION OF Sb IN Si(100) DOPING SUPERLATTICES

著者名:

Mogi, Toshiharu K.

Gossmann, H.-J.

Rafferty, C. S.

Unterwald, F. C.

Thompson, Michael O.

さらに 3 件

掲載資料名:

Evolution of thin film and surface structure and morphology : symposium held November 28-December 2, 1994, Boston, Massachusetts, USA

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

355

発行年:

1995

開始ページ:

157

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992566 [1558992561]

言語:

英語

請求記号:

M23500/355

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016576
シリーズID:	PA00000011
会議名:	Symposium on evolution of thin film and surface structure and morphology
回次:	1994
会議開催地:	Boston, MA, USA
会議開催年:	1994.11.28-1994.12.02

類似資料:

1 国際会議録 Dopant Diffusion in Si(100) Doping Superlattices During Thermal Nitridation and Vacancy Assisted Sb Precipitation Mogi, T.K., Gossmann, H-J., Eaglesham, D.J., Rafferty, C.S., Lufiman, H.S., Unterwald, F.C., Boone, T., Poate, J.M., … Electrochemical Society	7 国際会議録 Calibration Of The Au Labeling Technique To Measure Vacancy Defects In Si Kalyanaraman, Ramki, Haynes, Tony E., Jacobson, Dale C., Gossmann, Hans J., Rafferty, Conor S. Materials Research Society
2 国際会議録 Influence Of Vacuum Annealing on Native Si Point Defects Gossmann, H.-J., Mogi, T.K., Rafferty, C.S., Stolk, P.A., Eaglesham, D.J., Luftman, H.S., Unterwald, F.C., Boone, T., … Electrochemical Society	8 国際会議録 Si MBE ON H-PASSIVATED Si(100) Eaglesham, D.J., Unterwald, F.C., Luftman, H. Materials Research Society
3 国際会議録 Influence of Flouring and BF2 Implants on the Transient Enhanced Diffusion of Boron Vuong, H-H., Gossmann, H.-J., Rafferty, C.S., Luftman, H.S., Unterwald, F.C., Jacobson, D.C., Ahrens, R.E, Boone, T., … Electrochemical Society	9 国際会議録 The Role of Vacancies and Interstitials in Transient-Enhanced Diffusion of Arsenic Implanted Into Silicon Venables, D., Krishnamoorthy, V., Gossmann, H-J., Lilak, A., Jones, K. S., Jacobson, D. C. MRS - Materials Research Society
4 国際会議録 Atomistic Model of Transient-Enhanced Diffusion and Clustering of Boron in Silicon Pelaz, L., Gilmer, G. H., Jaraiz, M., Gossmann, H-J., Rafferty, C. S., Eaglesham, D. J., Poate, J. M. MRS - Materials Research Society	10 国際会議録 Junctions For Deep Sub-100 Nm MOS: How Far Will Ion Implantation Take Us? Gossmann, Hans-Joachim L., Rafferty, Conor S., Keys, P. H. Materials Research Society
5 国際会議録 UNDERSTANDING AND CONTROLLING TRANSIENT ENHANCED DOPANT DIFFUSION IN SILICON Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Luftman, H. S., Poate, J. M. MRS - Materials Research Society	11 国際会議録 Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation Venezia, V. C., Haynes, T. E., Agarwal, A., Gossmann, H-J., Eaglesham, D. J. MRS - Materials Research Society
6 国際会議録 Properties of Point-Defects in Si for Process Modeling Gossmann, H. J., Rafferty, C. S., Stolk, P. A., Eaglesham, D. J., Gilmer, G. H., Poate, J. M., Vuong, H.-H., Mogi, T. … MRS - Materials Research Society	12 国際会議録 BORON-ENHANCED-DIFFUSION OF BORON FROM ULTRA- LOW-ENERGY BORON IMPLANTATION Agarwal, A., Eaglesham, D.J., Gossmann, H.-J., Pelaz, L., Herner, S.B., Jacobson, D.C., Haynes, T.E., Erokhin, Yu E. Electrochemical Society

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