Charge Carrier Lifetime Modification in Silicon by High Energy H+,He+ Ion Implantation
- 著者名:
Khanh,N.Q. Tutto,P. Jaroli,E.N. Buiu,O. Biro,L.P. Paszti,F. Mohacsy,T. Kovacsics,C. Manuaba,A. Gyulai,J. - 掲載資料名:
- Materials science applications of ion beam techniques : proceedings of the International Symposium on Materials Science Applications of Ion Beam Techniques, incoeporating the 1st German-Australian Workshop on Ion Beam Analysis, Seeheim, Germany, September 9-12 1996
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 248-249
- 発行年:
- 1997
- 開始ページ:
- 101
- 終了ページ:
- 106
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497676 [0878497676]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Electrochemical Society, SPIE-The International Society for Optical Engineering |
Trans Tech Publications | |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
North-Holland |
Trans Tech Publications |
Materials Research Society |