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Charge Carrier Lifetime Modification in Silicon by High Energy H+,He+ Ion Implantation

著者名:
Khanh,N.Q.
Tutto,P.
Jaroli,E.N.
Buiu,O.
Biro,L.P.
Paszti,F.
Mohacsy,T.
Kovacsics,C.
Manuaba,A.
Gyulai,J.
さらに 5 件
掲載資料名:
Materials science applications of ion beam techniques : proceedings of the International Symposium on Materials Science Applications of Ion Beam Techniques, incoeporating the 1st German-Australian Workshop on Ion Beam Analysis, Seeheim, Germany, September 9-12 1996
シリーズ名:
Materials science forum
シリーズ巻号:
248-249
発行年:
1997
開始ページ:
101
終了ページ:
106
出版情報:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497676 [0878497676]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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