Blank Cover Image

Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski Silicon

著者名:
掲載資料名:
Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995
シリーズ名:
Materials science forum
シリーズ巻号:
196-201
発行年:
1995
パート:
3
開始ページ:
1129
終了ページ:
1134
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497164 [0878497161]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 EFFECT OF HEAVY BORON DOPING ON OXIDE PRECIPITATE GROWTH IN CZOCHRALSKI SILICON

Ono, T., Asayama, E., Horie, H., Hourai, M., Sueoka, K., Tsuya, H., Rozgonyi, G.A.

Electrochemical Society
7 国際会議録 THE INTERRELATION BETWEEN THE MORPHOLOGY OF THE OXYGEN PRECIPITATES AND THE JUNCTION LEAKAGE CURRENT IN CZOCHRALSKI SILICON CRYSTALS

Fujimori, H., Ushiku, Y., Ihnuma, T., Kirino, Y., Matsushita, Y.

Electrochemical Society
2 国際会議録 Luminescence centers in high-energy ion-implanted silicon

Terashima,K., Ikarashi,T., Watanabe,M., Kitano,T.

Trans Tech Publications
8 国際会議録 SCATTERING OF FREE CARRIERS BY OXYGEN PRECIPITATES IN CZOCHRALSKI-GROWN SILICON

Nauka, K., Walukiewicz, W., Lagowski, J., Gatos, H. C.

Materials Research Society
3 国際会議録 Size Distribution of Oxide Precipitates Determined by Bright Field Infrared Laser Interferometer(Optical Precipitate Profiler)in Annealed Czochralski Silicon

Sasaki,T., Ono,T., Rozgonyi,G.

SPIE - The International Society for Optical Engineering
9 国際会議録 Photoluminescence due to Oxygen Precipitates Distinguished from the D Lines in Annealed Si

Tajima,M., Tokita,M., Warashina,M.

Trans Tech Publications
4 国際会議録 Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers

Sucoka, K., Yonemura, M., Akatsuka, M., Katahama, H., Ono, T., Asayama, E.

Electrochemical Society
10 国際会議録 Defect Formation Behaviors in Heavily Doped Czochralski Silicon

W. Sugimura, T. Ono, S. Umeno, M. Hourai, K. Sueoka

Electrochemical Society
5 国際会議録 Oxygen Precipitation Behaviour in 300 mm Polished Czochralski Silicon Wafers

Ono, T., Rozgonyi, G.A., Au, C., Messina, T., Goodall, R.K., Huff, H.R.

Electrochemical Society
11 国際会議録 NUCLEATION OF OXYGEN PRECIPITATES IN A QUENCHED CZOCHRALSKI SILICON CRYSTAL

Ikari, A., Haga, H., Yoda, O., Uedono, A., Ujihira, Y.

Materials Research Society
6 国際会議録 Relation between Minute Lattice Strain and Anonmalous Oxygen Precipitation in a Czochralski-Grown Silicon Crystal

Kimura,S., Ikarashi,T., Tanikawa,A., Ishikawa,T.

Trans Tech Publications
12 国際会議録 COMPUTER SIMULATION FOR MORPHOLOGY, SIZE AND DENSITY OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON

Sueoka, K., Akatsuka, M., Okui, M., Katahama, H.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12