Characterization of MBE Grown Si Doped GaAs Layers on(100)GaAs and Si Substrates by Photoluminpscence

Characterization of MBE Grown Si Doped GaAs Layers on(100)GaAs and Si Substrates by Photoluminpscence

著者名:

掲載資料名:

Molecular beam epitaxy : proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, Oct. 2-7, 1989

シリーズ名:

Materials science forum

シリーズ巻号:

69

発行年:

1991

開始ページ:

179

終了ページ:

182

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496143 [0878496149]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016492
シリーズID:	PA00000012
会議名:	International Symposium on Molecular Beam Epitaxy
回次:	3rd
会議開催地:	Velico Tarnovo, Bulgaria
会議開催年:	1989.10.02-1989.10.07

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