AlGaAs/GaAs Heterojunction Photodiodes Grown by MBE

AlGaAs/GaAs Heterojunction Photodiodes Grown by MBE

著者名:

Riesz,F.

掲載資料名:

Molecular beam epitaxy : proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, Oct. 2-7, 1989

シリーズ名:

Materials science forum

シリーズ巻号:

69

発行年:

1991

開始ページ:

81

終了ページ:

84

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496143 [0878496149]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016492
シリーズID:	PA00000012
会議名:	International Symposium on Molecular Beam Epitaxy
回次:	3rd
会議開催地:	Velico Tarnovo, Bulgaria
会議開催年:	1989.10.02-1989.10.07

類似資料:

1 国際会議録 MBE Grown Planar Doped Barrier Diodes for Microwave Purposes Tuyen,V.V., Szentpali,B., Mojzes,I., Salokatve,A., Asonen,H., Pessa,M. Trans Tech Publications	7 国際会議録 In-BASED OHMIC CONTACTS TO THE BASE LAYER OF GaAs-AlGaAs HETEROJUNCTION BIPOLAR TRANSISTORS Ren, F., Pearton, S. J., Hobson, W. S., Fullowan, T. R., Emerson, A. B., Yanof, A. W., Schleich, D. M. Materials Research Society
2 国際会議録 Er-luminescence in MBE-grown AlGaAs Gusev,O.B., Lindmark,E.K., Prineas,J.P., Bresler,M.S., Khitrova,G., Gibbs,H.M., Yassievich,I.N., Zakharchenya,B.P., … Trans Tech Publications	8 国際会議録 Formation of Defects in MBE Re-Grown GaAs Films on GaAs/AlGaAs Heterostructures Lamberti, M., Tokranov, V., Moore, R., Yakimov, M., Katsnelson, A., Oktyabrsky, S. Materials Research Society
3 国際会議録 High-power diode lasers grown by solid-source MBE (Invited Paper) Pessa,M., Jalonen,M.U., Salokatve,A., Savolainen,P., Toivonen,M., Murison,R.F., Panarello,T., Jansen,M., Corvini,P. SPIE-The International Society for Optical Engineering	9 国際会議録 Wafer Curvature and Flatness Measurements Using the Magic-Mirror (Makyoh) Method Szabo, J., Riesz, Ferenc, Szentpali, B. MRS - Materials Research Society
4 国際会議録 Characterization of MBE Grown Si Doped GaAs Layers on(100)GaAs and Si Substrates by Photoluminpscence Pastrnak,J., Bosacchi,A., Salokatve,A., Varrio,J., Laanicka,M. Trans Tech Publications	10 国際会議録 Interface defects and their effect on the electrical properties of ZnSe/GaAs heterojunctions grown by MBE Seghier,D., Hauksson,I.S., Gislason,H.P., Prior,K.A., Cavenett,B.C. Trans Tech Publications
5 国際会議録 NEW APPROACH TO GROWTH OF HIGH-QUALITY GaAs LAYERS ON Si SUBSTRATES Varrio, Jukka, Salokatve, Arto, Asonen, Harry, Hovinen, Minna, Pessa, Markus, Ishida, Koichi, Kitajima, Hiroshi Materials Research Society	11 国際会議録 MCT infrared photodiodes on the basis of graded gap P-p heterojunction grown by MBE HgCdTe epilayers on GaAs [6189-91 ] Vasiliev V. V, Remesnik V. G, Dvoretsky S. A, Varavin V. S, Mikhailov N. N, Sidorov Yu. G, Suslyakov A. O, Aseev A. L SPIE - The International Society of Optical Engineering
6 国際会議録 Test Production of GaInP/GaAs Cascade Space Solar Cells by a High-Throughput Molecular Beam Epitaxy System Lammasniemi, J., Kazantsev, A.B., Jaakkola, R., Aho, R., Maekelae, T., Pessa, M., Ovtchinnikov, A., Asonen, H., Robben, … ESA Publications Division	12 国際会議録 *ATOMIC LAYER EPITAXY OF DILUTED MAGNETIC SEMICONDUCTORS Pessa, M., Lilja, J., Jylha, O., Ishiko, M., Asonen, H. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12