Electrical transport properties of highly doped N-type GaN epilayers

Electrical transport properties of highly doped N-type GaN epilayers

著者名:

Lee,H.J. ( Chonbuk National Univ.(Korea) )
Cheong,M.G. ( Chonbuk National Univ.(Korea) )
Suh,E.-K. ( Chonbuk National Univ.(Korea) )
Razeghi,M. ( Northwestern Univ. )

掲載資料名:

Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3287

発行年:

1998

開始ページ:

321

終了ページ:

326

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427267 [0819427268]

言語:

英語

請求記号:

P63600/3287

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016453
シリーズID:	PA00000029
会議名:	Photonics West : Photodetectors
回次:	1998 : 3rd
会議開催地:	San Jose, CA, USA
会議開催年:	1998.01.28-1998.01.30

類似資料:

1 国際会議録 A Two-Band Analysis of Electrical Transport in n-Type GaN Epilayers Cheong,M.G., Oh,K.S., Suh,E.-K., Lee,H.J. Trans Tech Publications	7 国際会議録 Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL) Lee, S.K., Seong, H.K., Choi, K.C., Cho, N.K., Choi, H.J., Suh, E.K., Nahm, K.S. Trans Tech Publications
2 国際会議録 Properties of InGaN/GaN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition Cheong, M.G., Kim, K.S., Kim, C.S., Choi, R.J., Yoon, H.S., Yu, S.W., Hong, Y.K., Hong, C.-H., Suh, E.-K., Lee, H.J. Materials Research Society	8 国際会議録 Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess As, D.J., Pacheco-Salazar, D.G., Potthast, S., Lischka, K. Materials Research Society
3 国際会議録 Photocurrent spectroscopy investigations of Mg-related defects levels in p-type GaN Chung, S. J., Cha, O. H., Cho, H. K., Jeong, M. S., Hong, CH., Suh, E-K., Lee, H. J. MRS-Materials Research Society	9 国際会議録 Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001) J.H. Moon, K.Y. Cheong, D.I. Eom, H.K. Song, J.H. Yim, J.H. Lee, H.J. Na, W. Bahng, N.K. Kim, H.J. Kim Trans Tech Publications
4 国際会議録 Co-doping characteristics of Si and Zn with Mg in p-type GaN Kim, K. S., Oh, C. S., Han, M. S., Kim, C. S., Yang, G. M., Yang, J. W., Hong, C-H., Youn, C. J., Lim, K. Y., Lee, H. J. MRS-Materials Research Society	10 国際会議録 Activation of Acceptors in Mg-Doped, p-Type GaN Gotz, W., Johnson, N. M., Walker, J., Bour, D. P. MRS - Materials Research Society
5 国際会議録 Electrical and Optical Properties of Highly Strained GaN Epilayers Usikov,A.S., Lundin,W.V., Pushnyi,B.V., Shmidt,N.M., Davydov,V.Yu., Sakharov,A.V., Shubina,T.V., Toropov,A.A., … Trans Tech Publications	11 国際会議録 Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111)Substrates Shim,H.W., Kim,K.C., Seo,Y.H., Nahm,K.S., Suh,E.-K., Lee,H.J., Hwang,Y.G. Trans Tech Publications
6 国際会議録 Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si As, D. J., Richter, A., Busch, J., Schottker, B., Lubbers, M., Mimkes, J., Schikora, D., Lischka, K., Kriegseis, W., … MRS-Materials Research Society	12 国際会議録 Fabrication and Electrical Transport Properties of CVD Grown Silicon Carbide Nanowires (SiC NWs) for Field Effect Transistor Seong, H.K., Lee, S.Y., Choi, H.J., Kim, T.H., Cho, N.K., Nahm, K.S., Lee, S.K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12