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Large bandgap shift in InGaAs(P)/Inp multiquantum well structure obtained by impurity-free vacancy diffusion using SiO2 capping and its application to photodetectors

著者名:
掲載資料名:
Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3287
発行年:
1998
開始ページ:
88
終了ページ:
95
出版情報:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819427267 [0819427268]
言語:
英語
請求記号:
P63600/3287
資料種別:
国際会議録

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