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Hot-carrier effects in sub-100-nm gate-length N-MOSFETs with thermal and nitrided oxide thickness down to 1.3 nm

著者名:
掲載資料名:
Microelectronic device technology II : 23-24 September, 1998, Santa Clara, California
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3506
発行年:
1998
開始ページ:
265
終了ページ:
270
出版情報:
Bellingham, Washington: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819429650 [0819429651]
言語:
英語
請求記号:
P63600/3506
資料種別:
国際会議録

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