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Growth and fabrication of high-performance 980-nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AIGaAs

著者名:
Yang,G. ( Institute of Semiconductors (China) )
Xu,Z. ( Institute of Semiconductors (China) )
Xu,J. ( Institute of Semiconductors (China) )
Ma,X. ( Institute of Semiconductors (China) )
Zhang,J. ( Institute of Semiconductors (China) )
Chen,L. ( Institute of Semiconductors (China) )
さらに 1 件
掲載資料名:
Semiconductor Lasers III
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3547
発行年:
1998
開始ページ:
64
終了ページ:
70
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819430083 [0819430080]
言語:
英語
請求記号:
P63600/3547
資料種別:
国際会議録

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