1.

Conference Proceedings
Conference Proceedings
1. Effects of N2 or Ar Plasma Exposure on GaAs/AlGaAs Heterojunction Bipolar Transistors *
Hsu, C.H. ; Chen, C.C. ; Ren, B.Luo.F. ; Pearton, S.J. ; Abernathy, C.R. ; Lee, J.W. ; Mackenzie, K.D. ; Sasserath, J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.241-249,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
2.

Conference Proceedings
Conference Proceedings
2. The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs
Luo, B. ; Trivedi, V.P. ; Ren, F. ; Hsu, C.H. ; Pearton, S.J. ; Abernathy, C.R. ; Cao, X. ; Wu, C.S. ; Hoppe, M. ; Sasserath, J. ; Lee, J.W.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.158-170,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
3.

Conference Proceedings
Conference Proceedings
3. Hydrogen Incorporation into III-V Nitrides During Processing
Pearton, S.J. ; Shul, R.J. ; Wilson, R.G. ; Ren, F. ; Zavada, J.M. ; Abernathy, C.R. ; Vartuli, C.B. ; Lee, J.W. ; Mileham, J.R. ; MacKenzie, J.D.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.178-186,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
4.

Conference Proceedings
Conference Proceedings
4. High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar
Lee, J.W. ; Pearton, S.J. ; Lambers, E.S. ; Mileham, J.R. ; Abernathy, C.R. ; Hobson, W.S. ; Ren, F. ; Shul, R.J.
Pub. info.: Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors.  pp.203-213,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-2
5.

Conference Proceedings
Conference Proceedings
5. High-Rate Etching of Metals for Magnetoelectronic Applications
Pearton, S.J. ; Jung, K.B. ; Hong, J. ; Lee, J.W. ; Caballero, J.A. ; Childress, J.R. ; Jenson, M. ; Hurst, A.T., Jr.
Pub. info.: Proceedings of the Twenty-Seventh State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII).  pp.270-285,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-21
6.

Conference Proceedings
Conference Proceedings
6. Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation
Ren, F. ; LaRoche, J. ; Anderson, T. ; Pearton, S.J. ; Lee, J.W. ; Johnson, D. ; Lothian, J.R. ; Lin, J. ; Weiner, J.S. ; Shul, R.J. ; Wu, C.S.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.513-519,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
7.

Conference Proceedings
Conference Proceedings
7. Electrical and Optical Properties of C, O and H in III-V Nitrides
Pearton, S.J. ; Lee, J.W. ; Abernathy, C.R. ; Wilson, R.G. ; Zavada, J.M. ; Zolper, J.C.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.209-219,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
8.

Conference Proceedings
Conference Proceedings
8. SURFACE PROTECTION DURING PLASMA HYDROGENATION FOR ACCEPTOR PASSIVATION IN InPD
Lopata, J. ; Dautremont-Smith, W.C. ; Pearton, S.J. ; Lee, J.W. ; Ha, N.T. ; Luftman, H.S.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.501-510,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
9.

Conference Proceedings
Conference Proceedings
9. DEPOSITION OF LOW-STRESS ENCAPSULANTS ON InP AND GaAs
Chakrabarti, U.K. ; Pearton, S.J. ; Barz, H. ; Vonneida, A.R. ; Short, K.T. ; Lee, J.W.
Pub. info.: Photon, beam, and plasma stimulated chemical processes at surfaces : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A..  pp.691-696,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 75
10.

Conference Proceedings
Conference Proceedings
10. Investigation of Wet Chemical Etching of InGaAlP Alloys
Lee, J.W. ; Santana, C.J. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S. ; Lothian, J.R. ; Wu, C.S.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.316-326,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
11.

Conference Proceedings
Conference Proceedings
11. Development of low temperature silicon nitride and silicon dioxide films by inductively-coupled plasma chemical vapor deposition
Lee, J.W. ; Mackenzie, K.D. ; Johnson, D. ; Pearton, S.J. ; Ren, F. ; Sasserath, J.N.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.69-79,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
12.

Conference Proceedings
Conference Proceedings
12. Effect of hydrogen on Ca and Mg acceptors in GaN
Lee, J.W. ; Pearton, S.J. ; Zolper, J.C. ; Stall, R.A.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.100-109,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
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Conference Proceedings
Conference Proceedings
13. Novel in-situ ion bombardment process for a thermally stable (>800 C) plasma deposited dielectric
Ren, F. ; Lothian, J.R. ; Pearton, S.J. ; Wilson, R.G. ; LaRoche, J.R. ; Lee, J.W. ; Johnson, D. ; Zavada, J.M.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.183-187,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
14.

Conference Proceedings
Conference Proceedings
14. The Role of AlN Encapsulation of GaN During Implant Activation Annealing
Zolper, J.C. ; Pearton, S.J. ; Rieger, D.J. ; Baca, A.G. ; Lee, J.W. ; Vartulli, C.R. ; Stall, R.A.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.244-248,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
15.

Conference Proceedings
Conference Proceedings
15. Plasma-Induced-Damage of GaN
Shul, R.J. ; Zolper, J.C. ; Hagerott Crawford, M. ; Hickamn, R.J. ; Briggs, R.D. ; Pearton, S.J. ; Lee, J.W. ; Karlicek, R.F., Jr. ; Tran, C. ; Schurman, M. ; Constantine, C. ; Barratt, C.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.232-243,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15