1.

Conference Proceedings
Conference Proceedings
1. Three-Dimensional Imaging of Extended Defects in 4H-SiC
R. Tanuma ; M. Nagano ; I. Kamata ; H. Tsuchida
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.361-366,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers
X. Zhang ; M. Nagano ; H. Tsuchida
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.335-338,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
3.

Conference Proceedings
Conference Proceedings
3. Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer
H. Tsuchida ; M. Ito ; I. Kamata ; M. Nagano
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.67-72,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
4.

Conference Proceedings
Conference Proceedings
4. Improved Deposited Oxide Interfaces from N2 Conditioning of Bare SiC Surfaces
J. Rozen ; M. Nagano ; H. Tsuchida
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.729-732,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
5.

Conference Proceedings
Conference Proceedings
5. High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
I. Kamata ; M. Nagano ; H. Tsuchida ; Y. Chen ; M. Dudley
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.305-308,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
6.

Conference Proceedings
Conference Proceedings
6. Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy
H. Tsuchida ; I. Kamata ; M. Nagano
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.267-272,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
7.

Conference Proceedings
Conference Proceedings
7. Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
M. Nagano ; H. Tsuchida ; T. Suzuki ; T. Hatakeyama ; J. Senzaki
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.477-480,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
8.

Conference Proceedings
Conference Proceedings
8. Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings
X. Zhang ; M. Nagano ; H. Tsuchida
Pub. info.: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.27-30,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 725
9.

Conference Proceedings
Conference Proceedings
9. Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing
X. Zhang ; M. Nagano ; H. Tsuchida
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.306-309,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
10.

Conference Proceedings
Conference Proceedings
10. Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC
M. Nagano ; H. Tsuchida ; T. Suzuki ; T. Hatakeyama ; J. Senzaki
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.611-614,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
11.

Conference Proceedings
Conference Proceedings
11. Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers
H. Tsuchida ; M. Ito ; I. Kamata ; M. Nagano ; T. Miyazawa
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.77-82,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
12.

Conference Proceedings
Conference Proceedings
12. Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process
H. Tsuchida ; I. Kamata ; M. Nagano ; L. Storasta ; T. Miyanagi
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.271-274,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
13.

Conference Proceedings
Conference Proceedings
13. Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process
M. Nagano ; H. Tsuchida ; T. Suzuki ; T. Hatakeyama ; J. Senzaki
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.323-326,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
14.

Conference Proceedings
Conference Proceedings
14. Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers
I. Kamata ; M. Nagano ; H. Tsuchida
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.303-306,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
15.

Conference Proceedings
Conference Proceedings
15. Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
M. Nagano ; I. Kamata ; H. Tsuchida
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.313-318,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
16.

Conference Proceedings
Conference Proceedings
16. Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures
X. Zhang ; M. Nagano ; H. Tsuchida
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.601-604,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
17.

Conference Proceedings
Conference Proceedings
17. Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
M. Nagano ; I. Kamata ; H. Tsuchida
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.653-656,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742