1.

Conference Proceedings
Conference Proceedings
1. Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles
T. Ohnuma ; A. Miyashita ; M. Iwasawa ; M. Yoshikawa ; H. Tsuchida
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.615-620,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation
L. Storasta ; H. Tsuchida
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.603-606,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. Generation of Amorphous SiO2/SiC Interface Structure by the First-Principles Molecular Dynamics Simulation
A. Miyashita ; T. Ohnuma ; M. Iwasawa ; H. Tsuchida ; M. Yoshikawa
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.521-524,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
4.

Conference Proceedings
Conference Proceedings
4. Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient
M. Ito ; H. Tsuchida ; I. Kamata ; L. Storasta
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.81-84,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
5.

Conference Proceedings
Conference Proceedings
5. Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm2
R. Ishii ; K. Nakayama ; H. Tsuchida ; Y. Sugawara
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1015-1018,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
6.

Conference Proceedings
Conference Proceedings
6. Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer
H. Tsuchida ; M. Ito ; I. Kamata ; M. Nagano
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.67-72,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
7.

Conference Proceedings
Conference Proceedings
7. High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
I. Kamata ; M. Nagano ; H. Tsuchida ; Y. Chen ; M. Dudley
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.305-308,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
8.

Conference Proceedings
Conference Proceedings
8. Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy
H. Tsuchida ; I. Kamata ; M. Nagano
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.267-272,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
9.

Conference Proceedings
Conference Proceedings
9. Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
M. Nagano ; H. Tsuchida ; T. Suzuki ; T. Hatakeyama ; J. Senzaki
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.477-480,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
10.

Conference Proceedings
Conference Proceedings
10. Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers
L. Storasta ; T. Miyazawa ; H. Tsuchida
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.477-480,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
11.

Conference Proceedings
Conference Proceedings
11. Dynamical Simulation of SiO2/4H-SiC Interface on C-Face Oxidation Process: From First Principles
T. Ohnuma ; A. Miyashita ; M. Iwasawa ; M. Yoshikawa ; H. Tsuchida
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.591-596,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
12.

Conference Proceedings
Conference Proceedings
12. Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC
M. Nagano ; H. Tsuchida ; T. Suzuki ; T. Hatakeyama ; J. Senzaki
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.611-614,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
13.

Conference Proceedings
Conference Proceedings
13. Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging
R. Ishii ; T. Miyanagi ; I. Kamata ; H. Tsuchida ; K. Nakayama ; Y. Sugawara
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.251-254,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
14.

Conference Proceedings
Conference Proceedings
14. Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process
H. Tsuchida ; I. Kamata ; M. Nagano ; L. Storasta ; T. Miyanagi
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.271-274,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
15.

Conference Proceedings
Conference Proceedings
15. Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
M. Ito ; L. Storasta ; H. Tsuchida
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.111-114,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
16.

Conference Proceedings
Conference Proceedings
16. Effective area partitioning for preparing parallel processing in mask data preparation
Y. Satou ; Y. Okamoto ; M. Fujimoto ; H. Tsuchida ; A. Satou
Pub. info.: Photomask technology 2007.  3  pp.67304C-1-67304C-10,  2007.  Bellingham, Wash..  Society of Photo-optical Instrumentation Engineers
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6730