1.

Conference Proceedings
Conference Proceedings
1. Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS
B. Zippelius ; M. Krieger ; H.B. Weber ; G. Pensl ; B. Kallinger
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.393-396,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
2.

Conference Proceedings
Conference Proceedings
2. Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes
B. Zippelius ; M. Krieger ; H.B. Weber ; G. Pensl ; H. Nagasawa
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.571-574,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
3.

Conference Proceedings
Conference Proceedings
3. Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy
S. Beljakowa ; M. Krieger ; T. Frank ; G. Pensl ; L. Trapaidze
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.727-730,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
4.

Conference Proceedings
Conference Proceedings
4. Ionization Energies of Phosphorus Donors in 6H-SiC
F. Schmid ; K. Semmelroth ; M. Krieger ; H.B. Weber ; G. Pensl
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.441-444,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
5.

Conference Proceedings
Conference Proceedings
5. Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers
S. Beljakowa ; S.A. Reshanov ; B. Zippelius ; M. Krieger ; G. Pensl
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.427-430,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
6.

Conference Proceedings
Conference Proceedings
6. Impurity Conduction in Silicon Carbide
M. Krieger ; K. Semmelroth ; H.B. Weber ; G. Pensl ; M. Rambach ; L. Frey
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.367-370,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
7.

Conference Proceedings
Conference Proceedings
7. Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC
M. Obernhofer ; M. Krieger ; F. Schmid ; H.B. Weber ; G. Pensl ; A. Schoerner
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.343-346,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
8.

Conference Proceedings
Conference Proceedings
8. Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects
B. Zippelius ; M. Krieger ; H.B. Weber ; G. Pensl ; H. Nagasawa
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.343-346,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
9.

Conference Proceedings
Conference Proceedings
9. Electrical Activation of B+-Ions Implanted into 4H-SiC
T. Tsirimpis ; M. Krieger ; H.B. Weber ; G. Pensl
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.697-700,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648