1.

Conference Proceedings
Conference Proceedings
1. Comparison of implant isolation species for GaN field-effect transistor structure
Dang, G. ; Cao, X. A. ; Ren, F. ; Pearton, S. J. ; Han, J. ; Baca, A. G. ; Shul, R. J. ; Wilson, R. G.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.68.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
2.

Conference Proceedings
Conference Proceedings
2. High density plasma damage induced in n-GaN schottky diodes using Cl2/Ar discharges
Zhang, A. P. ; Dang, G. ; Ren, F. ; Cao, X. A. ; Cho, H. ; Lambers, E. S. ; Pearton, S. J. ; Shul, R. J. ; Zhang, L. ; Baca, A. G. ; Hickman, R. ; Hove, J. M. Van
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.66.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
3.

Conference Proceedings
Conference Proceedings
3. ECR Etching of GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2
Shul, R. J. ; Baca, A. G. ; Rieger, D. J. ; Hou, H. ; Pearton, S. J. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.245-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
4.

Conference Proceedings
Conference Proceedings
4. Current Transport in W and Wsix Ohmic Contacts to InGaN and InN
Vartuli, C. B. ; Pearton, S. J. ; Abernathy, C. R. ; MacKenizie, J. D. ; Lovejoy, M. L. ; Shul, R. J. ; Zolper, J. C. ; Baca, A. G. ; Hagerott-Crawford, M. ; Jones, K. A. ; Ren, F.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.413-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
5.

Conference Proceedings
Conference Proceedings
5. Dielectrics for GaN-Based MIS Diodes
Ren, F. ; Abernathy, C. R. ; MacKenzie, J. D. ; Gila, B. P. ; Pearton, S. J. ; Hong, M. ; Macos, M. ; Schurman, M. J. ; Baca, A. G. ; Shul, R. J.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.443-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483