1.

Conference Proceedings
Conference Proceedings
1. Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs
Kerlain, A. ; Morvan, E. ; Dua, C. ; Caillas, N. ; Brylinski, C.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1177-1180,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
2.

Conference Proceedings
Conference Proceedings
2. Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
Blanque, S. ; Perez, R. ; Godignon, P. ; Mestres, N. ; Morvan, E. ; Kerlain, A. ; Dua, C. ; Brylinski, C. ; Zielinski, M. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.893-896,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
3.

Conference Proceedings
Conference Proceedings
3. Influence of Material Properties on Wide-Bandgap Microwave Power Device Characteristics
Morvan, E. ; Kerlain, A. ; Dua, C. ; Brylinski, C.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.731-736,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436