1.

Conference Proceedings
Conference Proceedings
1. Growth by low pressure chemical vapor deposition of silicon quantum dots on insulator for nanoelectronics devices
Baron, T. ; Martin, F. ; Mur, P. ; Wyon, C. ; Dupuy, M. ; Bussert, C. ; Souifi, A. ; Guillot, G.
Pub. info.: Semiconductor quantum dots : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.37-,  2000.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 571
2.

Conference Proceedings
Conference Proceedings
2. Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs
Sghaier, N. ; Bluet, J.M. ; Souifi, A. ; Guillot, G. ; Morvan, E. ; Brylinski, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1363-1366,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Optical and electrical characteristics of LEDs fabricated from Si-nanocrystals. embedded in SiO2
Garrido, B. ; Gonzalez, O. ; Cheylan, S. ; Lopez, M. ; Perez-Rodriguez, A. ; Garcia, C. ; Pellegrino, P. ; Ferrer, R. ; Morante, J. R. ; De La Torre, J. ; Souifi, A. ; Poncet, A. ; Busseret, C. ; Lemiti, M. ; Bremond, G. ; Guillot, G.
Pub. info.: Towards the first silicon laser.  pp.45-54,  2003.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 93
4.

Conference Proceedings
Conference Proceedings
4. Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiC
Lauer, V. ; Bremond, G. ; Souifi, A. ; Guillot, G. ; Chourou, K. ; Madar, R. ; Clerjaud, B.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.635-638,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs
Sghaier, N. ; Bluet, J.M. ; Souifi, A. ; Guillot, G. ; Morvan, E. ; Brylinski, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1363-1366,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393