*Current status of SiC power switching devices: Diodes and GTOs
- Author(s):
Seshadri, S. Agarwal, A. K. Hall, W. B. Mani, S. S. MacMillan, M. F. Rodrigues, R. Hanson, T. Khatri, S. Sanger, P. A. - Publication title:
- Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 572
- Pub. Year:
- 1999
- Page(from):
- 23
- Pub. info.:
- Warrendale, PA: MRS-Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994799 [1558994793]
- Language:
- English
- Call no.:
- M23500/572
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures
MRS - Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Society of Automotive Engineers |
9
Conference Proceedings
Implementation of a Si/SiC hybrid optically controlled higy-power switching device
SPIE-The International Society for Optical Engineering |
4
Conference Proceedings
100 kHz Operation of SiC Junction Controlled Thyristor (JCT) Switches Used in an All-SiC PWM Inverter
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power UMOSFET Structures
MRS - Materials Research Society |
Trans Tech Publications |
6
Conference Proceedings
High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications
Trans Tech Publications |
Trans Tech Publications |