1.

Conference Proceedings
Conference Proceedings
1. A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates
M. Winters ; M. Thorsell ; J. ul Hassan ; N. Rorsman ; E. Janzén
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.129-132,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC
Ö. Danielsson ; P. Sukkaew ; M. Yazdanfar ; O. Kordina ; E. Janzén
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.213-216,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
3.

Conference Proceedings
Conference Proceedings
3. Surface Preparation of 4 ° Off-Axis 4H-SiC Substrate for Epitaxial Growth
X. Li ; J. ul Hassan ; O. Kordina ; E. Janzén ; A. Henry
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.225-228,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
4.

Conference Proceedings
Conference Proceedings
4. Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates
H. Jacobson ; X. Li ; E. Janzén ; A. Henry
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.319-322,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
5.

Conference Proceedings
Conference Proceedings
5. Photoluminescence of 8H-SiC
A. Henry ; I.G. Ivanov ; E. Janzén ; T. Hatayama ; H. Yano
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.347-350,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
6.

Conference Proceedings
Conference Proceedings
6. Long Charge Carrier Lifetime in As-Grown 4H-SiC Epilayer
R. Karhu ; I. Booker ; I.G. Ivanov ; E. Janzén ; J. Ul Hassan
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.125-128,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
7.

Conference Proceedings
Conference Proceedings
7. Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates
L. Lilja ; J. Ul Hassan ; E. Janzén ; P. Bergman
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.209-212,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
8.

Conference Proceedings
Conference Proceedings
8. Investigation of Mo Defects in 4H-SiC by Means of Density Functional Theory
A. Csóré ; A. Gällström ; E. Janzén ; A. Gali
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.261-264,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
9.

Conference Proceedings
Conference Proceedings
9. Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
J.P. Bergman ; I.D. Booker ; L. Lilja ; J. Hassan ; E. Janzén
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.289-292,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
10.

Conference Proceedings
Conference Proceedings
10. Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC
A. Gällström ; B. Magnusson ; E. Janzén
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.405-408,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
11.

Conference Proceedings
Conference Proceedings
11. High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
I.D. Booker ; J. Hassan ; E. Janzén ; J.P. Bergman
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.293-296,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
12.

Conference Proceedings
Conference Proceedings
12. The Silicon Vacancy in SiC
E. Janzén ; A. Gali ; P. Carlsson ; A. Gällström ; B. Magnusson
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.347-352,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
13.

Conference Proceedings
Conference Proceedings
13. High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
J. Hassan ; J.P. Bergman ; A. Henry ; E. Janzén
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.115-118,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
14.

Conference Proceedings
Conference Proceedings
14. Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates
A. Henry ; S. Leone ; H. Pedersen ; O. Kordina ; E. Janzén
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.81-84,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
15.

Conference Proceedings
Conference Proceedings
15. The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers
L. Lilja ; J. Hassan ; I.D. Booker ; J.P. Bergman ; E. Janzén
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.161-164,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
16.

Conference Proceedings
Conference Proceedings
16. Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC
J. Hassan ; L. Lilja ; I.D. Booker ; J.P. Bergman ; E. Janzén
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.157-160,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
17.

Conference Proceedings
Conference Proceedings
17. Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
S. Leone ; H. Pedersen ; A. Henry ; O. Kordina ; E. Janzén
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.107-110,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
18.

Conference Proceedings
Conference Proceedings
18. CVD Growth of 3C-SiC on 4H-SiC Substrate
A. Henry ; X. Li ; S. Leone ; O. Kordina ; E. Janzén
Pub. info.: HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France.  pp.16-21,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 711
19.

Conference Proceedings
Conference Proceedings
19. Intrinsic Defects in HPSI 6H-SiC: An EPR Study
P. Carlsson ; N.T. Son ; B. Magnusson ; A. Henry ; E. Janzén
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.381-384,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
20.

Conference Proceedings
Conference Proceedings
20. Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor
I.G. Ivanov ; A. Henry ; F. Yan ; W.J. Choyke ; E. Janzén
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.245-248,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
21.

Conference Proceedings
Conference Proceedings
21. Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC
I.G. Ivanov ; C. Persson ; A. Henry ; E. Janzén
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.445-448,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
22.

Conference Proceedings
Conference Proceedings
22. Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates
N.T. Son ; P. Carlsson ; A. Gällström ; B. Magnusson ; E. Janzén
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.401-404,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
23.

Conference Proceedings
Conference Proceedings
23. New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC
A. Gali ; T. Hornos ; N.T. Son ; E. Janzén
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.413-416,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
24.

Conference Proceedings
Conference Proceedings
24. Titanium Related Luminescence in SiC
A. Henry ; J.P. Bergman ; E. Janzén
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.461-464,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
25.

Conference Proceedings
Conference Proceedings
25. Theory of Neutral Divacancy in SiC: A Defect for Spintronics
A. Gali ; A. Gällström ; N.T. Son ; E. Janzén
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.395-398,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
26.

Conference Proceedings
Conference Proceedings
26. Concentrated Chloride-Based Epitaxial Growth of 4H-SiC
A. Henry ; S. Leone ; S. Andersson ; O. Kordina ; E. Janzén
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.95-98,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
27.

Conference Proceedings
Conference Proceedings
27. Chloride-Based CVD at High Growth Rates on 3″ Vicinal Off-Angles SiC Wafers
S. Leone ; A. Henry ; O. Kordina ; E. Janzén
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.107-110,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
28.

Conference Proceedings
Conference Proceedings
28. Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements
Ö. Danielsson ; O. Kordina ; E. Janzén
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.218-221,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
29.

Conference Proceedings
Conference Proceedings
29. Improved Epilayer Surface Morphology on 2° Off-Cut 4H-SiC Substrates
L. Lilja ; J. Ul Hassan ; E. Janzén ; P. Bergman
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.206-209,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
30.

Conference Proceedings
Conference Proceedings
30. Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates
M. Yazdanfar ; H. Pedersen ; O. Kordina ; E. Janzén
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.159-162,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
31.

Conference Proceedings
Conference Proceedings
31. Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling
P. Sukkaew ; L. Ojamäe ; Ö. Danielsson ; O. Kordina ; E. Janzén
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.175-178,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
32.

Conference Proceedings
Conference Proceedings
32. Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate
X. Li ; E. Janzén ; A. Henry
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.131-134,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
33.

Conference Proceedings
Conference Proceedings
33. EPR Identification of Defects and Impurities in SiC: To be Decisive
J. Isoya ; T. Umeda ; N. Mizuochi ; N.T. Son ; E. Janzén
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.279-284,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
34.

Conference Proceedings
Conference Proceedings
34. The Role of Chlorine during High Growth Rate Epitaxy
R. Karhu ; I. Booker ; J. Ul Hassan ; I. Ivanov ; E. Janzén
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.141-144,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
35.

Conference Proceedings
Conference Proceedings
35. Theoretical Investigation of the Single Photon Emitter Carbon Antisite-Vacancy Pair in 4H-SiC
V. Ivády ; I. Abrikosov ; E. Janzén ; A. Gali
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.495-498,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
36.

Conference Proceedings
Conference Proceedings
36. First Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit Application
K. Szász ; V. Ivády ; E. Janzén ; A. Gali
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.499-502,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
37.

Conference Proceedings
Conference Proceedings
37. Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
L. Lilja ; J. ul Hassan ; I.D. Booker ; P. Bergman ; E. Janzén
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.637-640,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
38.

Conference Proceedings
Conference Proceedings
38. Low Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of Al
R.Y. Khosa ; E.Ö. Sveinbjörnsson ; M. Winters ; J. ul Hassan ; R. Karhu ; E. Janzén ; N. Rorsman
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.135-138,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
39.

Conference Proceedings
Conference Proceedings
39. Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
L. Lilja ; I. Farkas ; I. Booker ; J. ul Hassan ; E. Janzén ; J.P. Bergman
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.238-241,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897