1.

Conference Proceedings
Conference Proceedings
1. 39 MOSFET channel engineering using strained Si, SiGe and Ge channels
Fitzgerald, E.A. ; Lee, M.L. ; Leitz, C.W. ; Antoniadis, D.A.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.315-324,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
2.

Conference Proceedings
Conference Proceedings
2. Characterization of GaN Schottky Barrier Photodiodes With a Low-temperature GaN Cap Layer
Lee, M.L. ; Sheu, J.K. ; Su, Y.K. ; Chang, S.J. ; Lai, W.C. ; Chi G.C.
Pub. info.: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.260-269,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-06
3.

Conference Proceedings
Conference Proceedings
3. Relaxed SiGe On Insulator Fabricated via Wafer Bonding and Layer Transfer: Etch-back and Smart-cut Alternatives
Taraschi, G. ; Cheng, Z.-Y. ; Currie, M.T. ; Leitz, C.W. ; Langdo, T.A. ; Lee, M.L. ; Pitera, A. ; Fitzgerald, E.A. ; Antoniadis, D.A. ; Hoyt, J.L.
Pub. info.: Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium.  pp.27-32,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-3
4.

Conference Proceedings
Conference Proceedings
4. Reduction of Dark Current in AlGaN/GaN Schottky Barrier Photodetectors With a Low-Temperature-Grown GaN Cap Layer
Chi, G.C. ; Sheu, J.K. ; Lee, M.L. ; Kao, C.J. ; Su, Y.K. ; Chang, S.J. ; Lai, W.C.
Pub. info.: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.353-358,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 798
5.

Conference Proceedings
Conference Proceedings
5. Growth and Properties of AlGaInP Resonant Cavity Light Emitting Diodes (RCLEDs) on Ge/SiGe/Si Substrates
Kwon, O. ; Boeckl, J. ; Lee, M.L. ; Pitera, A.J. ; Fitzgerald, E.A. ; Ringel, S.A.
Pub. info.: Progress in compound semiconductor materials -- electronic and optoelectronic applications.  pp.161-166,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 799
6.

Conference Proceedings
Conference Proceedings
6. Mechanical Properties of La-Based Bulk Amorphous Alloys and Composites
Lee, M.L. ; Li, Y. ; Carter, W.C.
Pub. info.: Supercooled liquids, glass transition and bulk metallic glasses.  pp.339-346,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 754
7.

Conference Proceedings
Conference Proceedings
7. Planar GaN-Based UV Photodetectors Formed by Si Implantation
Chen, M.C. ; Sheu, J.K. ; Lee, M.L. ; Kao, C.J. ; Tun, C.J. ; Ch, G.C.
Pub. info.: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.522-528,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-06
8.

Conference Proceedings
Conference Proceedings
8. Study of Ge Out-Diffusion During Nickel (Platinum 〜 0, 5, 10 at.%) Germanosilicide Formation
Jin, L.J. ; Pey, K.L. ; Choi, W.K. ; Fitzgerald, E.A. ; Antoniadis, D.A. ; Pitera, A.J. ; Lee, M.L. ; Chi, D.Z.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.141-146,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810