1.

Conference Proceedings
Conference Proceedings
1. FIRST PRINCIPLE CALCULATIONS FOR NITROGEN- VACANCY RELATED DEFECTS IN NITROGEN DOPED SILICON; STRUCTURE, ENERGETICS AND THERMAL STABILITY
Karoui, A. ; Karoui, F.S. ; Rozgonyi, G.A. ; Hourai, M. ; Sueoka, K.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.670-681,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
2.

Conference Proceedings
Conference Proceedings
2. Effect of Oxygen and Nitrogen Doping on Mechanical Properties of Silicon Using Nanoindentation
Karoui, A. ; Rozgonyi, G. ; Ciszek, T.
Pub. info.: Nanoscale materials and modeling -- relations among processing, microstructure and mechanical properties : symposium held April 13-16, 2004, San Francisco, California, U.S.A..  pp.123-128,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 821
3.

Conference Proceedings
Conference Proceedings
3. Atomistic Modeling and Simulation of Impurity Atmosphere in Silicon and Edge Dislocation Locking Effects
Karoui, A.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.387-394,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
4.

Conference Proceedings
Conference Proceedings
4. Vibrational Spectra of Nitrogen-Oxygen Defects in Nitrogen Doped Silicon Using Density Functional Theory
Karoui, F.Sahtout ; Karoui, A. ; Inoue, N. ; Rozgonyi, G.A.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.381-386,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
5.

Conference Proceedings
Conference Proceedings
5. Nonlinear Transient Finite Element Analysis of the Relaxation Mechanisms in Strained Silicon Grown on SiGe Virtual Substrate
Sahtout Karoui, F. ; Karoui, A. ; Rozgonyi, G.
Pub. info.: Thin films : stresses and mechanical properties XI : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A..  pp.409-416,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 875
6.

Conference Proceedings
Conference Proceedings
6. FIRST PRINCIPLE CALCULATIONS FOR NITROGEN- VACANCY RELATED DEFECTS IN NITROGEN DOPED SILICON; STRUCTURE, ENERGETICS AND THERMAL STABILITY
Karoui, A. ; Karoui, F.S. ; Rozgonyi, G.A. ; Hourai, M. ; Sueoka, K.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.670-681,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
7.

Conference Proceedings
Conference Proceedings
7. In-Situ Observations of Point Defect Generation and Complexing During Electron Beam Irradiation of Nitrogen Doped Czochralski Silicon
Stoddard, N. ; Karoui, A. ; Duscher, G. ; Kvit, A. ; Rozgonyi, G.
Pub. info.: High purity silicon VII : proceedings of the international symposium.  pp.347-356,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-20
8.

Conference Proceedings
Conference Proceedings
8. Theoretical Analysis of Nitrogen Complexes in Cz Silicon
Funao, D. ; Ohkubo, I. ; Inoue, N. ; Karoui, A. ; Rozgonyi, G.A.
Pub. info.: High purity silicon VII : proceedings of the international symposium.  pp.133-140,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-20