1.

Conference Proceedings
Conference Proceedings
1. Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism
K.K. Lee ; G. Pensl ; M. Soueidan ; G. Ferro
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.505-508,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum
T. Frank ; S. Beljakowa ; G. Pensl ; T. Kimoto ; V. Afanas'ev
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.555-560,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. Selenium and Tellurium Double Donors in SiC
S.A. Reshanov ; H.B. Weber ; G. Pensl ; A. Schoener ; H. Nagasawa
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.607-610,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
4.

Conference Proceedings
Conference Proceedings
4. 4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al2O3
S. Beljakowa ; T. Frank ; G. Pensl ; K.Y. Gao ; F. Speck ; T. Seyller
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.627-630,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
5.

Conference Proceedings
Conference Proceedings
5. Determination of the Electrical Capture Process of the EH6-Center in n-Type 4H-SiC
J. Weber ; S. Beljakowa ; H.B. Weber ; G. Pensl ; B. Zippelius
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.377-380,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
6.

Conference Proceedings
Conference Proceedings
6. Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS
B. Zippelius ; M. Krieger ; H.B. Weber ; G. Pensl ; B. Kallinger
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.393-396,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
7.

Conference Proceedings
Conference Proceedings
7. Z1/2- and EH6-Center in 4H-SiC: Not Identical Defects ?
B. Zippelius ; A. Glas ; H.B. Weber ; G. Pensl ; T. Kimoto
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.251-254,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
8.

Conference Proceedings
Conference Proceedings
8. Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes
B. Zippelius ; M. Krieger ; H.B. Weber ; G. Pensl ; H. Nagasawa
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.571-574,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
9.

Conference Proceedings
Conference Proceedings
9. Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays
S. Hishiki ; S.A. Reshanov ; T. Ohshima ; H. Itoh ; G. Pensl
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.703-706,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
10.

Conference Proceedings
Conference Proceedings
10. Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy
S. Beljakowa ; M. Krieger ; T. Frank ; G. Pensl ; L. Trapaidze
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.727-730,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
11.

Conference Proceedings
Conference Proceedings
11. Lifetime Investigations of 4H-SiC PiN Power Diodes
S.A. Reshanov ; W. Bartsch ; B. Zippelius ; G. Pensl
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.699-702,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
12.

Conference Proceedings
Conference Proceedings
12. Iron-Related Defect Centers in 3C-SiC
T. Tsirimpis ; S. Beljakova ; B. Zippelius ; H.B. Weber ; G. Pensl
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.265-268,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
13.

Conference Proceedings
Conference Proceedings
13. Ionization Energies of Phosphorus Donors in 6H-SiC
F. Schmid ; K. Semmelroth ; M. Krieger ; H.B. Weber ; G. Pensl
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.441-444,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
14.

Conference Proceedings
Conference Proceedings
14. Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
S.A. Reshanov ; G. Pensl ; K. Danno ; T. Kimoto ; S. Hishiki
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.417-420,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
15.

Conference Proceedings
Conference Proceedings
15. Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs
K.K. Lee ; M. Laube ; T. Ohshima ; H. Itoh ; G. Pensl
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.791-794,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
16.

Conference Proceedings
Conference Proceedings
16. Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC
G. Alfieri ; T. Kimoto ; G. Pensl
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.455-458,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
17.

Conference Proceedings
Conference Proceedings
17. Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
S.A. Reshanov ; S. Beljakowa ; B. Zippelius ; G. Pensl ; K. Danno
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.423-426,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
18.

Conference Proceedings
Conference Proceedings
18. Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons
M. Weidner ; L. Trapaidze ; G. Pensl ; S.A. Reshanov ; A. Schöner
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.439-442,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
19.

Conference Proceedings
Conference Proceedings
19. Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers
S. Beljakowa ; S.A. Reshanov ; B. Zippelius ; M. Krieger ; G. Pensl
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.427-430,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
20.

Conference Proceedings
Conference Proceedings
20. Impurity Conduction in Silicon Carbide
M. Krieger ; K. Semmelroth ; H.B. Weber ; G. Pensl ; M. Rambach ; L. Frey
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.367-370,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
21.

Conference Proceedings
Conference Proceedings
21. Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC
M. Obernhofer ; M. Krieger ; F. Schmid ; H.B. Weber ; G. Pensl ; A. Schoerner
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.343-346,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
22.

Conference Proceedings
Conference Proceedings
22. (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory
G. Pensl ; F. Schmid ; S.A. Reshanov ; H.B. Weber ; M. Bockstedte ; A. Mattausch ; O. Pankratov ; T. Ohshima ; H. Itoh
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.307-312,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
23.

Conference Proceedings
Conference Proceedings
23. Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects
B. Zippelius ; M. Krieger ; H.B. Weber ; G. Pensl ; H. Nagasawa
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.343-346,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
24.

Conference Proceedings
Conference Proceedings
24. Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC
K. Kawahara ; G. Alfieri ; T. Hiyoshi ; G. Pensl ; T. Kimoto
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.651-654,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
25.

Conference Proceedings
Conference Proceedings
25. Electrical Activation of B+-Ions Implanted into 4H-SiC
T. Tsirimpis ; M. Krieger ; H.B. Weber ; G. Pensl
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.697-700,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648