1.

Conference Proceedings
Conference Proceedings
1. High-responsivity GaInAs/InP quantum well infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition
Erdtmann,M. ; Matlis,A.W. ; Jelen,C.L. ; Razeghi,M. ; Brown,C.J.
Pub. info.: Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California.  pp.220-226,  2000.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3948
2.

Conference Proceedings
Conference Proceedings
2. Characterization of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low-pressure MOCVD
Kim,S. ; Erdtmann,M. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California.  pp.371-380,  1999.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3629
3.

Conference Proceedings
Conference Proceedings
3. Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications
Erdtmann,M. ; Jiang,J. ; Matlis,A.W. ; Tahraoui,A. ; Jelen,C.L. ; Razeghi,M. ; Brown,G.J.
Pub. info.: Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California.  pp.227-232,  2000.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3948
4.

Conference Proceedings
Conference Proceedings
4. Quantum well infrared photodetector (λ=3-20 μm) focal plane arrays: monollthic integration with Si-based readout-integrated circultry for low cost and high performance
Razeghi,M. ; Erdtmann,M. ; Jelen,C.L. ; Diaz,J. ; Guastavinos,F. ; Brown,G.J. ; Park,Y.S.
Pub. info.: Infrared technology and applications XXVI : 30 July - 3 August 2000, San Diego, USA.  pp.335-347,  2000.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4130
5.

Conference Proceedings
Conference Proceedings
5. Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate
Erdtmann,M. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices VI : 22-24 January 2001, San Jose, USA.  pp.163-170,  2001.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4288
6.

Conference Proceedings
Conference Proceedings
6. Quantum dot intersubband photodetectors
Jelen,C.L. ; Erdtmann,M. ; Kim,S. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices VI : 22-24 January 2001, San Jose, USA.  pp.141-150,  2001.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4288
7.

Conference Proceedings
Conference Proceedings
7. The long wavelength luminescence observation from the self-organised InGaAs quantwn dots grown on(100)GaAs substrate by metalorganic chemical vapor deposition
Kim,K.S. ; Erdtmann,M. ; Razeghi,M.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1643-1652,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
8.

Conference Proceedings
Conference Proceedings
8. Localized epitaxy for vertical cavity surface emitting laser applications
Erdtmann,M. ; Kim,S. ; Razeghi,M.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1637-1642,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
9.

Conference Proceedings
Conference Proceedings
9. Temperature insensitivity of the Al-free InGaAsP lasers for ｦﾋ=808 and 980 nm
Razeghi,M. ; Yi,H. ; Diaz,J. ; Kim,S. ; Erdtmann,M.
Pub. info.: In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared.  pp.243-253,  1997.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3001