1.

Conference Proceedings
Conference Proceedings
1. CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates
Shishkin, Y. ; Ke, Y. ; Yan, F. ; Devaty, R.P. ; Choyke, W.J. ; Saddow, S.E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.255-258,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)
Starke, U. ; Lee, W.Y. ; Coletti, C. ; Saddow, S.E. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.677-680,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC
Ke, Y. ; Moisson, C. ; Gaan, S. ; Feenstra, R.M. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.743-746,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Columnar Morphology of Porous Silicon Carbide as a Protein-Permeable Membrane for Biosensors and Other Applications
Rosenbloom, A.J. ; Nie, S. ; Ke, Y. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.751-754,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Columnar Pore Growth in n-Type 6H SiC
Ke, Y. ; Yan, F. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.739-742,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. Brillouin Spectra of Porous p-Type 6H-SiC
Andrews, G.T. ; Young, C. ; Polomska, A. ; Clouter, M.J. ; Ke, Y. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.747-750,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
7.

Conference Proceedings
Conference Proceedings
7. Phonons in SiC from INS, IXS, and Ab-Initio Calculations
Strauch, D. ; Dorner, B. ; Ivanov, A.A. ; Krisch, M. ; Serrano, J. ; Bosak, A. ; Choyke, W.J. ; Stojetz, B. ; Malorny, M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.689-694,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
8.

Conference Proceedings
Conference Proceedings
8. Silicon Carbide: A Playground for 1D-Modulation Electronics
Deak, P. ; Buruzs, A. ; Gali, A. ; Frauenheim, T. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.355-358,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
9.

Conference Proceedings
Conference Proceedings
9. Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC
Yan, F. ; Devaty, R.P. ; Choyke, W.J. ; Gali, A. ; Bhat, I.B. ; Larkin, D.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.585-588,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
10.

Conference Proceedings
Conference Proceedings
10. A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers
Hornos, T. ; Gali, A. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.605-608,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
11.

Conference Proceedings
Conference Proceedings
11. EPR Studies of SiCISiO2 Interfaces in n-type 4H-and 6H- Oxidized Porous SIC
von Bardeleben, H.J. ; Cantin, J.L. ; Mynbaeva, M. ; Saddow, S.E. ; Shishkin, Y. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium.  pp.39-54,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-2
12.

Conference Proceedings
Conference Proceedings
12. TWO DEFECT-RELATED PHOTOLUMINESCENCE SPECTRA AND CROSS-SECTION TEM OF MBE GROWN CdTe ON (100) InSb
Feng, Z.C. ; Mascarenhas, A. ; Choyke, W.J. ; Farrow, R.F.C. ; Greggi, Jr., J. ; Shirland, F.A.
Pub. info.: Layered structures and epitaxy : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A..  pp.97-102,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 56
13.

Conference Proceedings
Conference Proceedings
13. STRUCTURAL CHARACTERIZATION OF MBE GROWN (001) CdTe FILMS BY MEANS OF TRANSMISSION ELECTRON MICROSCOPY, LOW TEMPERATURE PHOTOLUMINESCENCE AND DOUBLE CRYSTAL ROCKING CURVES
Burke, M.G. ; Choyke, W.J. ; Doyle, N.J. ; Feng, Z.C. ; Hanes, M.H. ; Mascarenhas, A.
Pub. info.: Interfaces, superlattices, and thin films : symposium held December 1-6, 1986, Boston, Massachusetts, U.S.A..  pp.615-622,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 77
14.

Conference Proceedings
Conference Proceedings
14. *CONTROL OF THE SURFACE REACTIVITY OF THE Si(100) SURFACE
Yates, J.T. ; Bozack, M.J. ; Muehlhoff, L. ; Choyke, W.J.
Pub. info.: Photon, beam, and plasma stimulated chemical processes at surfaces : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A..  pp.539-550,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 75
15.

Conference Proceedings
Conference Proceedings
15. Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution?
Thill, C. ; Knaup, J. ; Deak, P. ; Frauenheim, T. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1019-1022,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
16.

Conference Proceedings
Conference Proceedings
16. Four Current Examples of Characterization of Silicon Carbide
Bai, S. ; Ke, Yue ; Shishkin, Y. ; Shigiltchoff, O. ; Devaty, R.P. ; Choyke, W.J. ; Strauch, D. ; Stojetz, B. ; Dorner, B. ; Hobgood, D. ; Serrano, J. ; Cardona, M. ; Nagasawa, H. ; Kimoto, T. ; Porter, L.M.
Pub. info.: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.151-162,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 742
17.

Conference Proceedings
Conference Proceedings
17. Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
Shigiltchoff, O. ; Kimoto, T. ; Hobgood, D. ; Neudeck, P.G. ; Porter, L.M. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.921-924,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
18.

Conference Proceedings
Conference Proceedings
18. Electrical Activity of Isolated Oxygen Defects in SiC
Gali, A. ; Heringer, D. ; Deak, P. ; Hajnal, Z. ; Frauenheim, T. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.463-466,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
19.

Conference Proceedings
Conference Proceedings
19. PHOTOLUMINESCENCE, RAMAN SCATTERING AND RBS/CHANNELING OF EPITAXIAL FLORIDES
Choyke, W.J. ; Bradshaw, J.L. ; Mascarenhas, A. ; Feng,Z.C. ; Sinharoy, S. ; Hoffman, R.A.
Pub. info.: Defect properties and processing of high-technology nonmetallic materials : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A..  pp.355-364,  1986.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 60
20.

Conference Proceedings
Conference Proceedings
20. Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport
Yoganathan, M. ; Gupta, A. ; Semenas, E. ; Emorhokpor, E. ; Martin, C. ; Kerr, T. ; Zwieback, I. ; Souzis, A.E. ; Anderson, T.A. ; Tanner, C.D. ; Chen, J. ; Barrett, D.L. ; Hopkins, R.H. ; Johnson, C.J. ; Yan, Fei ; Choyke, W.J. ; Devaty, R.P.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.21-26,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
21.

Conference Proceedings
Conference Proceedings
21. Photoluminescence Study of C-H and C-D Centers in 4H SiC
Bai, S. ; Yan, F. ; Devaty, R.P. ; Choyke, W.J. ; Grotzschel, R. ; Wagner, G. ; MacMillan, M.F.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.589-592,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
22.

Conference Proceedings
Conference Proceedings
22. Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells
Bai, S. ; Devaty, R.P. ; Choyke, W.J. ; Kaiser, U. ; Wagner, G. ; MacMillan, M.F.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.573-576,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
23.

Conference Proceedings
Conference Proceedings
23. Brillouin Scattering Studies of Surface Acoustic Waves in SiC
Andrews, G.T. ; Clouter, M.J. ; Mroz, B. ; Shishkin, Y. ; Ke, Y. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.653-656,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
24.

Conference Proceedings
Conference Proceedings
24. Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC
Choyke, W.J. ; Devaty, R.P. ; Bai, S. ; Gali, A. ; Deak, P. ; Pensl, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.585-588,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
25.

Conference Proceedings
Conference Proceedings
25. Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor
Bai, S. ; Wagner, G. ; Shishkin, E. ; Choyke, W.J. ; Devaty, R.P. ; Zhang, M. ; Pirouz, P. ; Kimoto, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.589-592,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
26.

Conference Proceedings
Conference Proceedings
26. Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
Shigiltchoff, O. ; Kimoto, T. ; Hobgood, D. ; Neudeck, P.G. ; Porter, L.M. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.921-924,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
27.

Conference Proceedings
Conference Proceedings
27. Triangular Pore Formation in Highly Doped n-Type 4H SiC
Shishkin, Y. ; Choyke, W.J. ; Devaty, R.P.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1467-1470,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
28.

Conference Proceedings
Conference Proceedings
28. Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
Gali, A. ; Deak, P. ; Rauls, E. ; Ordejon, P. ; Carlsson, F.H.C. ; Ivanov, I.G. ; Son, N.T. ; Janzen, E. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.443-448,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
29.

Conference Proceedings
Conference Proceedings
29. Valence Band Splittings of 15R-SiC Measured using Wavelength Modulated Absorption Spectroscopy
Devaty, R.P. ; Bai, S. ; Choyke, W.J. ; Hobgood, D. ; Larkin, D.J.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.357-360,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
30.

Conference Proceedings
Conference Proceedings
30. Porous Structure of Anodized p-Type 6H SiC
Shishkin, Y. ; Ke, Y. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1471-1474,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
31.

Conference Proceedings
Conference Proceedings
31. Isotope Effects on Hydrogen-Related Bound Exciton Spectra in SiC
Bai, S. ; Choyke, W.J. ; Devaty, R.P.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.641-644,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
32.

Conference Proceedings
Conference Proceedings
32. Porous Silicon Carbide as a Membrane for Implantable Biosensors
Rosenbloom, A.J. ; Shishkin, Y. ; Sipe, D.M. ; Ke, Y. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1463-1466,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
33.

Conference Proceedings
Conference Proceedings
33. Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC
von Bardeleben, H.J. ; Cantin, J.L. ; Shishkin, Y. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1457-1462,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
34.

Conference Proceedings
Conference Proceedings
34. Structural Properties of GaN films Grown by Molecular Beam Epitaxy on Vicinal SiC(0001)
Lee, C.D. ; Feenstra, R.M. ; Shigiltchoff, O. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.189-194,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
35.

Conference Proceedings
Conference Proceedings
35. Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering
Serrano, J. ; Strempfer, J. ; Cardona, M. ; Schwoerer-Bohning, M. ; Requardt, H. ; Lorenzen, M. ; Stojetz, B. ; Pavone, P. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.257-260,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
36.

Conference Proceedings
Conference Proceedings
36. A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC
Deak, P. ; Gali, A. ; Hajnal, Z. ; Frauenheim, Th. ; Son, N.T. ; Janzen, E. ; Choyke, W.J. ; Ordejon, P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.535-538,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
37.

Conference Proceedings
Conference Proceedings
37. Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor
Bai, S. ; Wagner, G. ; Shishkin, E. ; Choyke, W.J. ; Devaty, R.P. ; Zhang, M. ; Pirouz, P. ; Kimoto, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.589-592,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
38.

Conference Proceedings
Conference Proceedings
38. Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC
Choyke, W.J. ; Devaty, R.P. ; Bai, S. ; Gali, A. ; Deak, P. ; Pensl, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.585-588,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
39.

Conference Proceedings
Conference Proceedings
39. Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
Reshanov, S.A. ; Klettke, O. ; Pensl, G. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.459-462,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
40.

Conference Proceedings
Conference Proceedings
40. A Shallow Acceptor Complex in 4H-SiC: AlSiNCAlSi
Deak, P. ; Aradi, B. ; Gali, A. ; Gerstmann, U. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.523-526,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
41.

Conference Proceedings
Conference Proceedings
41. SiC Defect Density Reduction by Epitaxy on Porous Surfaces
Saddow, S.E. ; Mynbaeva, M. ; Choyke, W.J. ; Devaty, R.P. ; Bai, S. ; Melnychuck, G. ; Koshka, Y. ; Dmitriev, V. ; Wood, C.E.C.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.115-118,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
42.

Conference Proceedings
Conference Proceedings
42. Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
Shigiltchoff, O. ; Bai, S. ; Devaty, R.P. ; Choyke, W.J. ; Kimoto, T. ; Hobgood, D. ; Neudeck, P.G. ; Porter, L.M.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.705-708,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436