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14 results

Conference Proceedings

1. Forming Gas Annealing of the Carbon PbC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study

Cantin, J.L. ; von Bardeleben, H.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1015-1018, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. EPR Studies of SiCISiO2 Interfaces in n-type 4H-and 6H- Oxidized Porous SIC

von Bardeleben, H.J. ; Cantin, J.L. ; Mynbaeva, M. ; Saddow, S.E. ; Shishkin, Y. ; Devaty, R.P. ; Choyke, W.J.

Pub. info.:	Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium. pp.39-54, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-2

Conference Proceedings

3. Influence of Oxidation on the Photoluminescence Properties of Porous SiGe

Lebib, S. ; Cantin, J.L. ; von Bardeleben, H.J. ; Cernogora, J. ; Fave, J.L. ; Roussel, J. ; Wang, Y.S. ; Ricolleau, C. ; Poulin, S. ; Yelon, A.

Pub. info.:	Proceedings of the International Symposium on Pits and Pores--Formation, Properties, and Significance for Advanced Luminescent Materials. pp.410-421, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-7

Conference Proceedings

4. Electron Paramagnetic Resonance Study of Defects at Nitric Oxide Treated Si/SiO2 and Si/Si3N4 Interfaces

Cantin, J.L. ; von Bardeleben, H.-J.

Pub. info.:	The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000. pp.161-168, 2000. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-2

Conference Proceedings

5. Interface and Volume Defects in SiNx:H/<100>Si Prepared by DECR Plasma Deposition

Aubert, P. ; Delmotte, F. ; Hugon, M.C. ; Agius, B. ; Cantin, J.L. ; von Bardeleben, H.J.

Pub. info.:	Proceedings of the International Symposium on Thin Film Materials, Processes, Reliability, and Applications, Thin Film Processes. pp.283-291, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-30

Conference Proceedings

6. Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold

von Bardeleben, H.J. ; Cantin, J.L. ; Baranov, P.G. ; Mokhov, E.N.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.509-512, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

7. Low-Frequency Vibrational Spectroscopy in SiC Polytypes

Pajot, B. ; Fall, C.J. ; Cantin, J.L. ; von Bardeleben, H.J. ; Jones, R. ; Briddon, P.R. ; Gendron, F.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.349-352, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

8. EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC

von Bardeleben, H.J. ; Cantin, J.L.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.513-516, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

9. Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC

von Bardeleben, H.J. ; Cantin, J.L. ; Shishkin, Y. ; Devaty, R.P. ; Choyke, W.J.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1457-1462, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

10.

Conference Proceedings

10. Phosphorus-Related Shallow and Deep Defects in 6H-SiC

Baranov, P.G. ; Ilyin, I.V. ; Mokhov, E.N. ; von Bardeleben, H.J. ; Cantin, J.L.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.503-506, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

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Author: Cantin, J.L.