1.

Conference Proceedings
Conference Proceedings
1. Die Bonding Issues on Silicon Carbide Diodes
Lee, S.Y. ; Lee, J.S. ; Kim, T.H. ; Choi, S.Y. ; Kim, H.J. ; Bahng, W. ; Kim, N.K. ; Lee, S.K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.875-878,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates
Bahng, W. ; Cheong, H.J. ; Kang, I.H. ; Kim, S.C. ; Kim, K.H. ; Kim, N.K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.207-210,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source
Kim, K.M. ; Seo, S.H. ; Kim, J.W. ; Song, J.S. ; Oh, M.H. ; Bahng, W. ; Kim, E.D.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.55-58,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Trench Formation on Ion Implanted SiC Surfaces after Thermal Oxidation
Bahng, W. ; Song, G. H. ; Kim, N. K. ; Kim, S. C. ; Kim, H. W. ; Seo, K. S. ; Kim, E. D.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.777-780,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
5.

Conference Proceedings
Conference Proceedings
5. Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET Fabrication
Kim, S. C. ; Bahng, W. ; Kim, N. K. ; Kim, E. D. ; Ayalew, T. ; Grasser, T. ; Selberherr, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.793-796,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
6.

Conference Proceedings
Conference Proceedings
6. Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
Bahng, W. ; Kitou, Y. ; Nishizawa, S. ; Yamaguchi, H. ; Khan, M. N. ; Oyanagi, N. ; Arai, K. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.103-106,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
7.

Conference Proceedings
Conference Proceedings
7. Suppression of Macrostep Formation in 4H-SiC Using a Cap Oxide Layer
Bahng, W. ; Kim, N.-K. ; Kim, S. C. ; Song, G. H. ; Kim, E.-D.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.863-866,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Shape of SiC Bulk Single Crystal Grown by Sublimation
Nishizawa, S. ; Kitou, Y. ; Bahng, W. ; Oyanagi, N. ; Khan, M. N. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.99-102,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
9.

Conference Proceedings
Conference Proceedings
9. Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC
Cheong, K. Y. ; Bahng, W. ; Kim, N. K.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.689-692,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
10.

Conference Proceedings
Conference Proceedings
10. Pressure Effect in Sublimation Growth of Bulk SiC
Kitou, Y. ; Bahng, W. ; Nishizawa, S. ; Nishino, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.83-86,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)