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13 results

Conference Proceedings

1. THE EFFECT OF HYDROGEN TREATMENT ON ELECTRICAL PROPERTIES OF A1GaAsSb

Polyakov, A. Y. ; Stam, M. ; Milnes, A. G. ; Wilson, R. G. ; Bochkarev, A. E. ; Raichoudhyry, P. ; Hillard, R. J. ; Pearton, S. J,.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.425-430, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

2. HIGH RESISTIVITY GaSb AND GaAs PRODUCED BY MBE GROWTH AT ELEVATED TEMPERATURES

Polyakov, A. Y. ; Milnes, A. G. ; Stam, M, ; Wilson, R. G. ; Fang, Z. Q. ; Raichoudhury, P. ; Hillard, R. J.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.157-162, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

3. High-Resolution X-ray Diffraction Analysis of GaN-Based Heterostructures Grown by OMVPE

Goorsky, M. S. ; Polyakov, A. Y. ; Skowronski, M. ; Shin, M. ; Greve, D. W.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.489-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

4. Growth of AlBN Solid Solution by OMVPE

Shin, M. ; Polyakov, A. Y. ; Qian, W. ; Skowronski, M. ; Greve, D. W. ; Wilson, R. G.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.141-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

5. Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPE

Polyakov, A. Y. ; Govorkov, A. V. ; Smirnov, N. B. ; Shin, M. ; Skowronski, M. ; Greve, D. W.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.591-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

6. Deep Levels in High Resistivity AlGaN Films Grown by MOCVD

Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Redwing, J. M.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.239-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

7. Factors Influencing the Electrical and Optical Properties of AlGaN Layers on Sapphire

Shin, M. ; Polyakov, A. Y. ; Skowronski, M. ; Greve, D. W. ; Wilson, R. G. ; Freitas, J. A.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.643-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

Conference Proceedings

8. The Influence of Hydrogen Plasma Passivation on Electrical and Optical Properties of AlGaN Samples Grown on Sapphire

Polyakov, A. Y. ; Shin, M. ; Pearton, S. J. ; Skowronski, M. ; Greve, D. W. ; Freitas, J. A.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.607-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

Conference Proceedings

9. Persistent Photoconductivity in AlGaN Films Grown by MOCVD

Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Redwing, J. M.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.537-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

10.

Conference Proceedings

10. FERMI LEVEL PINNING IN Au SCHOTTKY BARRIERS ON InGaP AND InGaAlP

Gorbylev, V. A. ; Chelniy, A. A. ; Chekalin, A. A. ; Polyakov, A. Y. ; Pearton, S. J. ; Smirnov, N. B. ; Govorkov, A. V. ; Leiferov, B. M. ; Popova, E. V. ; Kusikov, V. A. ; Balmashnov, A. A.

Pub. info.:	Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.. pp.265-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	340

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