1.

Conference Proceedings
Conference Proceedings
1. IMPLANT ISOLATION OF DEVICE STRUCTURES CONTAINING BURIED, HIGHLY-DOPED LAYERS
Pearton, S.J. ; Ren, F. ; D'asaro, L.A. ; Hobson, W.S. ; Fullowan, T.R. ; Lothian, J. ; Abernathy, C.R. ; Kopf, R.F. ; Kuo, J.-M.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.451-458,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
2.

Conference Proceedings
Conference Proceedings
2. DRY ETCH SELF-ALIGNED AlInAs/InGaAs HETEROJUNCTION BIPOLAR TRANSISTORS
Fullowan, T. R. ; Pearton, S. J. ; Kopf, R. F. ; Ren, F. ; Chen, Y. K. ; Smith, P. R. ; Chin, C. A. ; Lothian, J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.285-292,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
3.

Conference Proceedings
Conference Proceedings
3. USE OF Pt GATE METALLIZATION TO REDUCE GATE LEAKAGE CURRENT IN GaAs MESFETs
Ren, F. ; Emerson, A. B. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Lothian, J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.409-416,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
4.

Conference Proceedings
Conference Proceedings
4. COMPARISON OF DISILANE AND TETRAETHYLTIN AS GASEOUS DOPANTS FOR GROWTH OF n-GaAs AND n-AlGaAs BY MOMBE
Wisk, P. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. ; Fullowan, T. ; Lothian, J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.63-68,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
5.

Conference Proceedings
Conference Proceedings
5. Progress on 850-nm-Flip-Chip-Bondable VCSEL for Optical Interconnects
Cunningham, J. E. ; Jan, W. Y. ; Goossen, K. W. ; Krishnamoorthy, A. ; Walker, J. A. ; Tseng, B. ; Giaritta, G. ; Lothian, J. ; Kropf, R. ; Brenner, I. ; Sciortino, P. ; Chu, G. ; Leibenguth, R.
Pub. info.: Materials and devices for silicon-based optoelectronics : symposium held December 1-3, 1997, Boston, Massachusetts, U.S.A..  pp.79-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 486