1.

Conference Proceedings
Conference Proceedings
1. Forming Gas Annealing of the Carbon PbC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study
Cantin, J.L. ; von Bardeleben, H.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1015-1018,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. EPR Studies of SiCISiO2 Interfaces in n-type 4H-and 6H- Oxidized Porous SIC
von Bardeleben, H.J. ; Cantin, J.L. ; Mynbaeva, M. ; Saddow, S.E. ; Shishkin, Y. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium.  pp.39-54,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-2
3.

Conference Proceedings
Conference Proceedings
3. Influence of Oxidation on the Photoluminescence Properties of Porous SiGe
Lebib, S. ; Cantin, J.L. ; von Bardeleben, H.J. ; Cernogora, J. ; Fave, J.L. ; Roussel, J. ; Wang, Y.S. ; Ricolleau, C. ; Poulin, S. ; Yelon, A.
Pub. info.: Proceedings of the International Symposium on Pits and Pores--Formation, Properties, and Significance for Advanced Luminescent Materials.  pp.410-421,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-7
4.

Conference Proceedings
Conference Proceedings
4. STRUCTURAL AND DEFECT STUDY OF LOW TEMPERATURE InP GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY
Garcia, J.Ch. ; Hirtz, J.P. ; Maurel, P. ; von Bardeleben, H.J. ; Bourgoin, J.C.
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.277-282,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241
5.

Conference Proceedings
Conference Proceedings
5. THE ROLE OF EL2 FOR THE MOBILITY-LIFETIME PRODUCT OF PHOTOEXCITED ELECTRONS IN GaAs
Valley, G.C. ; von Bardeleben, H.J. ; Rajbenbach, H.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.837-844,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
6.

Conference Proceedings
Conference Proceedings
6. THE METASTABILITY OF THE EL2 AND DX DEFECTS IN GaAs AND 3-5 ALLOYS
von Bardeleben, H.J. ; Bourgoin, J.C.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.799-804,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
7.

Conference Proceedings
Conference Proceedings
7. ELECTRIC FIELD ENHANCEMENT OF ELECTRON EMISSION FROM DX CENTERS AND CONSEQUENCES
Bourgoin, J.C. ; Zazoui, M. ; Feng, S.L. ; von Bardeleben, H.J. ; Alaya, S. ; Maaref, H.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.747-752,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
8.

Conference Proceedings
Conference Proceedings
8. CORRELATION OF THE 0.8 Ev EMISSION BAND WITH THE EL6 CENTER IN GaAs
Alaya, S. ; Zaidi, M.A. ; Marrakchi, G. ; Maaref, H. ; von Bardeleben, H.J. ; Bourgoin, J.C.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.163-168,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
9.

Conference Proceedings
Conference Proceedings
9. Interface and Volume Defects in SiNx:H/<100>Si Prepared by DECR Plasma Deposition
Aubert, P. ; Delmotte, F. ; Hugon, M.C. ; Agius, B. ; Cantin, J.L. ; von Bardeleben, H.J.
Pub. info.: Proceedings of the International Symposium on Thin Film Materials, Processes, Reliability, and Applications, Thin Film Processes.  pp.283-291,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-30
10.

Conference Proceedings
Conference Proceedings
10. ELECTRON PARAMAGNETIC RESONANCE STUDY OF LOW TEMPERATURE MOLECULAR BEAM EPITAXY GROWN GaAs AND InP LAYERS
von Bardeleben, H.J. ; Jia, Y.Q. ; Hirtz, J.P. ; Garcia, J.C. ; Manasreh, M.O. ; Stutz, C.E. ; Evans,
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.69-74,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241
11.

Conference Proceedings
Conference Proceedings
11. Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold
von Bardeleben, H.J. ; Cantin, J.L. ; Baranov, P.G. ; Mokhov, E.N.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.509-512,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
12.

Conference Proceedings
Conference Proceedings
12. Low-Frequency Vibrational Spectroscopy in SiC Polytypes
Pajot, B. ; Fall, C.J. ; Cantin, J.L. ; von Bardeleben, H.J. ; Jones, R. ; Briddon, P.R. ; Gendron, F.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.349-352,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
13.

Conference Proceedings
Conference Proceedings
13. EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC
von Bardeleben, H.J. ; Cantin, J.L.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.513-516,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
14.

Conference Proceedings
Conference Proceedings
14. EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC
Bratus', V.Ya. ; Makeeva, I.N. ; Okulov, S.M. ; Petrenko, T.L. ; Petrenko, T.T. ; von Bardeleben, H.J.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.517-520,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
15.

Conference Proceedings
Conference Proceedings
15. Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC
von Bardeleben, H.J. ; Cantin, J.L. ; Shishkin, Y. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1457-1462,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
16.

Conference Proceedings
Conference Proceedings
16. Calculation of Hyperfine Constants of Defects in 4H-SiC
Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E. ; von Bardeleben, H.J. ; Monge, J.-L.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.511-514,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
17.

Conference Proceedings
Conference Proceedings
17. Phosphorus-Related Shallow and Deep Defects in 6H-SiC
Baranov, P.G. ; Ilyin, I.V. ; Mokhov, E.N. ; von Bardeleben, H.J. ; Cantin, J.L.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.503-506,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
18.

Conference Proceedings
Conference Proceedings
18. EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V
von Bardeleben, H.J. ; Cantin, J.L. ; Reshanov, S.A. ; Rastegaev, V.P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.507-510,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
19.

Conference Proceedings
Conference Proceedings
19. EPR Studies of Interface Defects in n-Type 6H-SiC/SiO2 Using Porous SiC
von Bardeleben, H.J. ; Cantin, J.L. ; Mynbaeva, M. ; Saddow, S.E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.495-498,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
20.

Conference Proceedings
Conference Proceedings
20. EPR Study of the Defects in Porous Si/SiO x N y and Si0.80Ge0.20/SiGeO2
Cantin, J.L. ; Schoisswohl, M. ; von Bardeleben, H.J. ; Morazzani, V. ; Ganem, J.-J. ; Trimaille, I.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.28-45,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1
21.

Conference Proceedings
Conference Proceedings
21. A Combined Photoluminescence aha Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC
Sullivan, W. ; Steeds, J.W. ; von Bardeleben, H.J. ; Cantin, J.L.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.477-480,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529