1.

Conference Proceedings
Conference Proceedings
1. The OW of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC
Lee, W.W. ; Zvanut, M.E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.647-650,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Deep Level Point Defects in Semi-Insulating SiC
Zvanut, M.E. ; Lee, W.W. ; Wang, H. ; Mitchel, W.C. ; Mitchell, W.D.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.517-522,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Paper Withdrawn at Press Time
Alvarez, D. ; Konovalov, V. ; Zvanut, M.E.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.266-275,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
4.

Conference Proceedings
Conference Proceedings
4. Activation of Mg Acceptors in GaN:Mg Monitored by Electron Paramagnetic Resonance Spectroscopy
Matlock, D. ; Zvanut, M.E. ; DiMaio, Jeffrey R. ; Davis, R.F. ; Henry, R.L. ; Koleske, Daniel ; Wickenden, Alma
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.819-824,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743
5.

Conference Proceedings
Conference Proceedings
5. Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC
Zvanut, M.E. ; Konovalov, V.V. ; Mitchel, W.C. ; Mitchell, W.D.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.489-492,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. Stress-Induced Positive Charge and Oygen-Vacancy-Related Defects in Hydrogen-Annealed SiO2 Films
Lin, H. ; Zvanut, M.E.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.538-546,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1
7.

Conference Proceedings
Conference Proceedings
7. Effects of Re-Oxidation on the Electrical Properties of Wet Oxide Grown on C-Face of 4H-SiC
Chanana, R.K. ; Zvanut, M.E.
Pub. info.: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.523-528,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-2