1.

Conference Proceedings
Conference Proceedings
1. Electrical and Optical Properties of C, O and H in III-V Nitrides
Pearton, S.J. ; Lee, J.W. ; Abernathy, C.R. ; Wilson, R.G. ; Zavada, J.M. ; Zolper, J.C.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.209-219,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
2.

Conference Proceedings
Conference Proceedings
2. Ion Implantation in Wide Bandgap Semiconductors: Device Needs and Technological Challenges
Zolper, J.C. ; Pearton, S.J.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.76-82,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
3.

Conference Proceedings
Conference Proceedings
3. Device Processing of Wide Bandgap Semiconductors - Challenges and Directions
Pearton, S.J. ; Ren, F. ; Shul, R.J. ; Zolper, J.C.
Pub. info.: Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI).  pp.138-161,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-1
4.

Conference Proceedings
Conference Proceedings
4. High-density plasma-induced etch damage of GaN
Shul, R.J. ; Zhang, L. ; Baca, A.G. ; Willison, C.G. ; Han, J. ; Pearton, S.J. ; Ren, F. ; Zolper, J.C. ; Lester, L.F.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.271-280,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
5.

Conference Proceedings
Conference Proceedings
5. Effect of hydrogen on Ca and Mg acceptors in GaN
Lee, J.W. ; Pearton, S.J. ; Zolper, J.C. ; Stall, R.A.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.100-109,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
6.

Conference Proceedings
Conference Proceedings
6. III-Nitride ion implantation and device processing
Zolper, J.C. ; Shul, R.J. ; Baca, A.G. ; Pearton, S.J. ; Abernathy, C.R. ; Wilson, R.G. ; Stall, R.A. ; Shur, M.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.149-158,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
7.

Conference Proceedings
Conference Proceedings
7. Dry Etching and Implantation Characteristics of III-N Alloys
Pearton, S.J. ; Vartuli, C.B. ; Shul, R.J. ; Zolper, J.C.
Pub. info.: Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI).  pp.108-122,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-34
8.

Conference Proceedings
Conference Proceedings
8. The Role of AlN Encapsulation of GaN During Implant Activation Annealing
Zolper, J.C. ; Pearton, S.J. ; Rieger, D.J. ; Baca, A.G. ; Lee, J.W. ; Vartulli, C.R. ; Stall, R.A.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.244-248,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
9.

Conference Proceedings
Conference Proceedings
9. Plasma-Induced-Damage of GaN
Shul, R.J. ; Zolper, J.C. ; Hagerott Crawford, M. ; Hickamn, R.J. ; Briggs, R.D. ; Pearton, S.J. ; Lee, J.W. ; Karlicek, R.F., Jr. ; Tran, C. ; Schurman, M. ; Constantine, C. ; Barratt, C.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.232-243,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
10.

Conference Proceedings
Conference Proceedings
10. Status of Ion Implantation Doping and Isolation of III-V Nitrides
Zolper, J.C. ; Pearton, S.J. ; Abernathy, C.R. ; Vartuli, C. B. ; Yuan, C. ; Stall, R.A.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.144-151,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21