1.

Conference Proceedings
Conference Proceedings
1. Behavior of W and WSix Contact Metallization on n- and P-Type GaN
Cao, X. A. ; Ren, F. ; Lothian, J. R. ; Pearton, S. J. ; Abernathy, C. R. ; Zolper, J. C. ; Cole, M. W. ; Zeitouny, A. ; Eizenberg, M. ; Shul, R. J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.39.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
2.

Conference Proceedings
Conference Proceedings
2. Activation characteristics of donor and acceptor implants in GaN
Cao, X. A. ; Pearton, S. J. ; Singh, R. K. ; Wilson, R. G. ; Sekhar, J. A. ; Zolper, J. C. ; Han, J. ; Rieger, D. J. ; Shul, R. J. ; Guo, H. J. ; Pennycook, S. J. ; Zavada, J. M.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.513-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
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Conference Proceedings
Conference Proceedings
3. Properties of H, O and C in GaN
Pearton, S. J. ; Abernathy, C. R. ; Lee, J. W. ; Vartuli, C. B. ; MacKenzie, J. D. ; Ren, F. ; Wilson, R. G. ; Zavada, J. M. ; Shul, R. J. ; Zolper, J. C.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.347-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
4.

Conference Proceedings
Conference Proceedings
4. Ion Implantation for High Performance III-V JFETs and HFETs
Zolper, J. C. ; Baca, A. G. ; Sherwin, M. E. ; Klem, J. F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.209-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
5.

Conference Proceedings
Conference Proceedings
5. Chemical Etching of AlN and InAlN in KOH Solutions
Vartuli, C. B. ; Lee, J. W. ; MacKenzie, J. D. ; Pearton, S. J. ; Abernathy, C. R. ; Zolper, J. C. ; Shul, R. J. ; Ren, F.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1017-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
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Conference Proceedings
Conference Proceedings
6. Complementary HFET Technology for Low-Power Mixed-Mode Applications
Baca, A. G. ; Sherwin, M. E. ; Zolper, J. C. ; Dubbert, D. F. ; Hietala, V. M. ; Shul, R. J. ; Sloan, L. R. ; Hafich, M. J.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.227-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
7.

Conference Proceedings
Conference Proceedings
7. Ion Implantation and Annealing Studies in III-V Nitrides
Zolper, J. C. ; Pearton, S. J. ; Williams, J. S. ; Tan, H. H. ; Karlicek, R. J., Jr. ; Stall, R. A.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.981-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
8.

Conference Proceedings
Conference Proceedings
8. Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System
Cao, X. A. ; Abernathy, C. R. ; Singh, R. K. ; Pearton, S. J. ; Fu, M. ; Sarvepalli, V. ; Sekhar, J. A. ; Zolper, J. C. ; Rieger, D. J. ; Han, J. ; Drummond, T. J. ; Shul, R. J. ; Wilson, R. G.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.463-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
9.

Conference Proceedings
Conference Proceedings
9. Junction Field-Effect Transistors for High-Temperature or High-Power Electronics
Zolper, J. C.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.83-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
10.

Conference Proceedings
Conference Proceedings
10. The Effect of Hydrogen Carrier Gas on the Morphological Evolution and Material Properties of GaN on Sapphire
Ng, T. B. ; Han, J. ; Biefeld, R. M. ; Zolper, J. C. ; Crawford, M. H. ; Follstaedt, D. M.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.143-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
11.

Conference Proceedings
Conference Proceedings
11. Wet Chemical Etching Survey of III-Nitrides
Cho, Hyun ; Hays, D. C. ; Vartuli, C. B. ; Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Ren, F. ; Zolper, J. C.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.265-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
12.

Conference Proceedings
Conference Proceedings
12. Repid Thermal Processing of Implanted GaN Up to 1500°C
Cao, X. A. ; Pearton, S. J. ; Singh, R. K. ; Abernathy, C. R. ; Han, J. ; Shul, R. J. ; Rieger, D. J. ; Zolper, J. C. ; Wilson, R. G. ; Fu, M. ; Sekhar, J. A. ; Guo, H. J. ; Pennycook, S. J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.33.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
13.

Conference Proceedings
Conference Proceedings
13. Implantation Activation Annealing of Si-Implanted Gallium Nitride at Temperatures > 1100°C
Zolper, J. C. ; Han, J. ; Biefeld, R. M. ; Van Deusen, S. B. ; Wampler, W. R. ; Pearton, S. J. ; Williams, J. S ; Tan, H. H. ; Karlicek, R. J., Jr. ; Stall, R. A.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.401-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
14.

Conference Proceedings
Conference Proceedings
14. Current Transport in W and Wsix Ohmic Contacts to InGaN and InN
Vartuli, C. B. ; Pearton, S. J. ; Abernathy, C. R. ; MacKenizie, J. D. ; Lovejoy, M. L. ; Shul, R. J. ; Zolper, J. C. ; Baca, A. G. ; Hagerott-Crawford, M. ; Jones, K. A. ; Ren, F.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.413-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
15.

Conference Proceedings
Conference Proceedings
15. Processing Challenges for GaN-Based Photonic and Electronic Devices
Pearton, S. J. ; Ren, F. ; Shul, R. J. ; Zolper, J. C. ; Katz, A.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.331-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
16.

Conference Proceedings
Conference Proceedings
16. High Temperature Surface Degradation of III-V Nitrides
Vartuli, C. B. ; Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Zolper, J. C. ; Lambers, E. S.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.569-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
17.

Conference Proceedings
Conference Proceedings
17. p- and n-Type Implantation Doping of GaN with Ca and O
Zolper, J. C. ; Wilson, R. G. ; Pearton, S. J. ; Stall, R. A.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.189-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
18.

Conference Proceedings
Conference Proceedings
18. W, WSix and Ti/Al Low Resistance Ohmic Contacts to InGaN, InN and InAlN
Vartuli, C. B. ; Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Shul, R. J. ; Zolper, J. C. ; Lovejoy, M. L. ; Baca, A. G. ; Hagerott-Crawford, M.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.373-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
19.

Conference Proceedings
Conference Proceedings
19. Role of C. O and H in III-Nitrides
Abernathy, C. R. ; Pearton, S. J. ; Mackenzie, J. D. ; Lee, J. W. ; Vartuli, C. B. ; Wilson, R. G. ; Shul, R. J. ; Zolper, J. C. ; Zavada, J. M.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.685-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
20.

Conference Proceedings
Conference Proceedings
20. Ion Implantation Doping and High Temperature Annealing of GaN
Zolper, J. C. ; Crawford, M. Hagerott ; Howard, A. J. ; Pearton, S. J. ; Abernathy, C. R. ; Vartuli, C. B. ; Yuan, C. ; Stall, R. A. ; Ramer, J. ; Hersee, S. D. ; Wilson, R. G.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.801-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
21.

Conference Proceedings
Conference Proceedings
21. Calculations of the Specific Resistance of Contacts to III-V Nitride Compounds
Barnes, P. A. ; Zhang, X-J ; Lovejoy, M. L. ; Drummond, T. J. ; Hjalmarson, H. P. ; Crawford, M. ; Shul, R. J. ; Zolper, J. C.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.849-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
22.

Conference Proceedings
Conference Proceedings
22. GaN Device Processing
Pearton, S. J. ; Ren, F. ; Zolper, J. C. ; Shul, R. J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.961-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
23.

Conference Proceedings
Conference Proceedings
23. Recent Progress in Implantation and Annealing of GaN and AlGaN
Zolper, J. C. ; Han, J. ; Deusen, S. B. Van ; Crawford, M. H. ; Biefeld, R. M. ; Jun, J. ; Suski, T. ; Baranowski, J. M. ; Pearton, S. J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.979-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
24.

Conference Proceedings
Conference Proceedings
24. Rapid Thermal Processing of III-Nitrides
Hong, J. ; Lee, J. W. ; Vartuli, C. B. ; MacKenzie, J. D. ; Donovan, S. M. ; Abernathy, C. R. ; Crockett, R. V. ; Pearton, S. J. ; Zolper, J. C. ; Ren. F.
Pub. info.: Rapid thermal and integrated processing VI : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.401-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 470
25.

Conference Proceedings
Conference Proceedings
25. THERMALLY STABLE OXYGEN AND NITROGEN IMPLANT ISOLATION OF C-DOPED Al0.35Ga0.65As
Zolper, J. C. ; Sherwin, M. E. ; Baca, A. G. ; Schneider, R. P., Jr.
Pub. info.: Materials synthesis and processing using ion beams : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A..  pp.379-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 316
26.

Conference Proceedings
Conference Proceedings
26. Fabrication and characterization of GaN junction field effect transistors
Zhang, L. ; Lester, L. F. ; Baca, A. G. ; Shul, R. J. ; Chang, P. C. ; Willison, C. G. ; Mishra, U. K. ; DenBaars, S. P. ; Zolper, J. C.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W4.9.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
27.

Conference Proceedings
Conference Proceedings
27. High Resistivity InAlN by Nitrogen or Oxygen Implantation
Zolper, J. C. ; Pearton, S. J. ; Abernathy, C. R. ; Vartuli, C. B.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.485-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378