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34 results

Conference Proceedings

1. BEHAVIOUR OF IMPLANTED HYDROGEN IN GALLIUM PHOSPHIDE SINGLE CRYSTALS

Zavada, J. M. ; Wilson, R,. G. ; Novak, S. W. ; Pearton, S. J. ; Neida, Von A. R.

Pub. info.:	Advances in materials, processing, and devices in III-V compound semiconductors. pp.457-462, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	144

Conference Proceedings

2. HYDROGEN INCORPORATION AND CARRIER REDUCTION IN HYDROGENATED n-GaAs:Si AND p-GaAs:Zn CRYSTALS

Zavada, J. M. ; Wilson, R. G. ; Jenkinson, H. A.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.661-666, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

3. HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY OF PROTON IMPLANTED GALLIUM ARSENIDE

Sadana, d.K. ; Zavada, J. M. ; Jenkinson, H. A. ; Sands, T.

Pub. info.:	Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A.. pp.377-384, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	46

Conference Proceedings

4. REDISTRIBUTION OF IMPLANTED HYDROGEN IN p+ GaAs (Zn) AND n+ GaAs(Si) CRYSTALS

Zavada, J. M. ; Wilson, R. G. ; Novak, S. W. ; Von Neida, A. R. ; Pearton, S. J.

Pub. info.:	Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.331-336, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	104

Conference Proceedings

5. Realization of tunable photonic crystals based on the metal-insulator transition of V02 [6128-10]

Xiao, D. ; Kim, W. ; Zavada, J. M. ; Lazzi, G.

Pub. info.:	Photonic crystal materials and devices IV : 23-26 January, 2006, San Jose, California, USA. pp.61280A-, 2006. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	6128

Conference Proceedings

6. INFRARED REFLECTANCE CHARACTERIZATION OF A GaAs-A1As SUPERLATTICE

Zavada, J. M. ; Hubler, G. K. ; Jenkinson, H. A. ; Laidig, W. D

Pub. info.:	Materials for infrared detectors and sources : symposium held December 1-5, 1986, Boston, Massachusetts, U.S.A.. pp.257-262, 1987. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	90

Conference Proceedings

7. As-IMPLANTED AND ANNEALING BEHAVIOR OF H AND Be IMPLANTS IN InP AND COMPARISON WITH GaAs

Zavada, J. M. ; Wilson, R. G. ; Novak, S. W.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.881-886, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

8. Hydrogen in GaN Experiments

Pearton, S. J. ; Lee, J. W. ; Wilson, R. G. ; Zavada, J. M. ; Weinstein, M. G. ; Song, C. Y. ; Stavola, M.

Pub. info.:	Hydrogen in semiconductors and metals : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.229-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	513

Conference Proceedings

9. Photoluminescence enhancement and morphological properties of carbon co-doped GaN: Er

Overberg. M. E. ; Abernathy, C. R. ; Pearton, S. J. ; Wilson, R. G. ; Zavada, J. M.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W11.62.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

10.

Conference Proceedings

10. Comparison of the optical properties of Er3+ doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecular beam epitaxy (SSMBE)

Hommerich, U. H. ; Seo, J. T. ; MacKenzie, J. D. ; Abernathy, C. R. ; Birkhahn, R. ; Steckl, A. J. ; Zavada, J. M.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W11.65.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

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